Fixation Ratio of Error Location-Aware Strategy for Increased Reliable Retention Time of Flash Memory.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/tvlsi/WeiQWP16
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/WeiQWP16
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Debao_Wei
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Liyan_Qiao
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Shiyuan_Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xiyuan_Peng
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2016.2537846
>
foaf:
homepage
<
https://doi.org/10.1109/TVLSI.2016.2537846
>
dc:
identifier
DBLP journals/tvlsi/WeiQWP16
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FTVLSI.2016.2537846
(xsd:string)
dcterms:
issued
2016
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/tvlsi
>
rdfs:
label
Fixation Ratio of Error Location-Aware Strategy for Increased Reliable Retention Time of Flash Memory.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Debao_Wei
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Liyan_Qiao
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Shiyuan_Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xiyuan_Peng
>
swrc:
number
10
(xsd:string)
swrc:
pages
3145-3155
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/WeiQWP16/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/tvlsi/WeiQWP16
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi24.html#WeiQWP16
>
rdfs:
seeAlso
<
https://doi.org/10.1109/TVLSI.2016.2537846
>
dc:
title
Fixation Ratio of Error Location-Aware Strategy for Increased Reliable Retention Time of Flash Memory.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
24
(xsd:string)