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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/YangHC11>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ching-Te_Chuang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hao-I_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei_Hwang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2010.2049038>
foaf:homepage <https://doi.org/10.1109/TVLSI.2010.2049038>
dc:identifier DBLP journals/tvlsi/YangHC11 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2010.2049038 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ching-Te_Chuang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hao-I_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei_Hwang>
swrc:number 7 (xsd:string)
swrc:pages 1192-1204 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/YangHC11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/YangHC11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi19.html#YangHC11>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2010.2049038>
dc:title Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 19 (xsd:string)