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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/YinCNH19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michael_T._Niemier>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaobo_Sharon_Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaoming_Chen_0003>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xunzhao_Yin>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2018.2871119>
foaf:homepage <https://doi.org/10.1109/TVLSI.2018.2871119>
dc:identifier DBLP journals/tvlsi/YinCNH19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2018.2871119 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michael_T._Niemier>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaobo_Sharon_Hu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaoming_Chen_0003>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xunzhao_Yin>
swrc:number 1 (xsd:string)
swrc:pages 159-172 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/YinCNH19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/YinCNH19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi27.html#YinCNH19>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2018.2871119>
dc:title Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 27 (xsd:string)