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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/access/CaoBWWYW19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cheng-Hao_Yu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fei_Cao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mengtian_Bao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wen-Ju_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xue_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ying_Wang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FACCESS.2019.2927231>
foaf:homepage <https://doi.org/10.1109/ACCESS.2019.2927231>
dc:identifier DBLP journals/access/CaoBWWYW19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FACCESS.2019.2927231 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/access>
rdfs:label An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cheng-Hao_Yu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fei_Cao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mengtian_Bao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wen-Ju_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xue_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ying_Wang>
swrc:pages 95710-95715 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/access/CaoBWWYW19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/access/CaoBWWYW19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/access/access7.html#CaoBWWYW19>
rdfs:seeAlso <https://doi.org/10.1109/ACCESS.2019.2927231>
dc:title An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 7 (xsd:string)