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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/HeZWSZZ19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang_0027>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiubai_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shaowei_Zhen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiaoqing_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xin_Si>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yajuan_He>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2019.2919104>
foaf:homepage <https://doi.org/10.1109/TVLSI.2019.2919104>
dc:identifier DBLP journals/tvlsi/HeZWSZZ19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2019.2919104 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo_Zhang_0027>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiubai_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shaowei_Zhen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiaoqing_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xin_Si>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yajuan_He>
swrc:number 10 (xsd:string)
swrc:pages 2344-2353 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/HeZWSZZ19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/HeZWSZZ19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi27.html#HeZWSZZ19>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2019.2919104>
dc:title A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 27 (xsd:string)