Search results for "GaAs"

Hits ?▲	Authors	Title	Venue	Year	Link
15	Yu-Ming Wu, Tian Qiang, Cong Wang 0005, Kishor Kumar Adhikari, Xin Lv, Yongle Wu	GaAs-Based IPD-Fabricated Center-Frequency-Controllable Bandpass Filter With Asymmetrical Differential Inductor and Air-Bridge Enhanced Capacitor.	IEEE Access	2019	DBLP DOI BibTeX RDF
15	Jan Kucera 0001, Pavel Svoboda, Klaus Pierz	AC and DC Quantum Hall Measurements in GaAs-Based Devices at Temperatures Up To 4.2 K.	IEEE Trans. Instrum. Meas.	2019	DBLP DOI BibTeX RDF
15	Kunihiro Kawai, Hiroshi Okazaki, Shoichi Narahashi, Noriharu Suematsu	Resonant Frequency and Bandwidth Tunable Ring Resonator Using GaAs FET SPST Switches.	IEICE Trans. Electron.	2019	DBLP DOI BibTeX RDF
15	Jincan Zhang, Min Liu, Liwen Zhang, Jinchan Wang, Bo Liu 0031	Design of a Low-Phase-Noise Ka-Band GaAs HBT VCO.	J. Circuits Syst. Comput.	2019	DBLP DOI BibTeX RDF
15	Nader Javadifar, Massoud Dousti, Hassan Hajghassem	A Wideband Extended-Dynamic-Range Successive Detection Logarithmic Amplifier Based on 0.15 μm GaAs pHEMT Technology.	J. Circuits Syst. Comput.	2019	DBLP DOI BibTeX RDF
15	Dan Hu, Hongyan Wang, Xiwei Zhang, Kexin Wang, Qiaofen Zhu	Near-infrared six-band polarization-independent wide-angle absorber based on metal cavity arrays filled with GaAs.	Sci. China Inf. Sci.	2019	DBLP DOI BibTeX RDF
15	Saber Helmy Zainud-Deen, Mina Dawoud, Hend Abd El-Azem Malhat, Mohamed A. Aboul-Dahab	Absorption Enhancement of GaAs Thin-Film Solar Cells Using Tapered Metal Nanoantenna Structures.	Wirel. Pers. Commun.	2019	DBLP DOI BibTeX RDF
15	J. Ajayan, D. Nirmal, P. Mohankumar, Dheena Kuriyan, A. S. Augustine Fletcher, L. Arivazhagan, B. Santhosh Kumar	GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review.	Microelectron. J.	2019	DBLP DOI BibTeX RDF
15	Anuar de Jesus Fernandez Olvera, Álvaro Morales, Yunfeng Dong, Dimitrios Konstantiouv, Simon Rommel, Tom Johansen, Chigo Okonkwo, Idelfonso Tafur Monroy, Sascha Preu	W-Band Heterodyne Wireless System with 2.3 GHz Intermediate Frequency Driven Entirely by ErAs: In(Al)GaAs Photoconductors.	ICTON	2019	DBLP DOI BibTeX RDF
15	Crina Cojocaru, Laura Rodríguez-Suñé, Michael Scalora, José Trull	Phase Locked Harmonic Generation in the Opaque Region of GaAs.	ICTON	2019	DBLP DOI BibTeX RDF
15	Emmanuel D. Le Boulbar, Lydia Jarvis, David Hayes, Samuel Shutts, Zhibo Li, Mingchu Tang, Huiyun Liu, Alireza Samani, Peter M. Smowton, Nicolás Abadía	Temperature Dependent Behavior of the Optical Gain and Electroabsorption Modulation Properties of an InAs/GaAs Quantum Dot Epistructure.	ICTON	2019	DBLP DOI BibTeX RDF
15	H. W. Wan, Y. J. Hong, L. B. Young, M. Hong, J. Kwo	Fundamental Understanding of Oxide Defects in HfO2 and Y2O3 on GaAs(001) with High Thermal Stability.	IRPS	2019	DBLP DOI BibTeX RDF
15	Mohamed Abdelaal 0001, Mochamad Dandy, Frank Dürr, Kurt Rothermel, Marwan Abdelgawad	GaaS: Adaptive Cross-Platform Gateway for IoT Applications.	MASS	2019	DBLP DOI BibTeX RDF
15	Talat Cetin, Can Onol, Gökhun Selçuk	A Ka-Band Front-End in 100nm GaAs Process for In-Band Full Duplex Communications.	EUROCON	2019	DBLP DOI BibTeX RDF
15	Valdrin Qunaj, Patrick Reynaert	A Compact Ka-Band Transformer-Coupled Power Amplifier for 5G in 0.15um GaAs.	BCICTS	2019	DBLP DOI BibTeX RDF
15	Daniel Martin, Michael Roberg, Zoya Popovic, Taylor Barton	A 6-12 GHz Reconfigurable Transformer-Based Outphasing Combiner in 250-nm GaAs.	BCICTS	2019	DBLP DOI BibTeX RDF
15	Dong Liu, John Papapolymerou, Parsian K. Mohseni, Michael Becker 0014, Jung-Hun Seo, John D. Albrecht, Timothy A. Grotjohn, Zhenqiang Ma, Sang Jung Cho, Aaron Hardy, Jisoo Kim, Cristian J. Herrera-Rodriguez, Edward Swinnich, Mohadeseh A. Baboli, Jiarui Gong, Xenofon Konstantinou	Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction.	BCICTS	2019	DBLP DOI BibTeX RDF
15	Masaharu Ito, Takashi Okawa, Tsunehisa Marumoto	D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System.	BCICTS	2019	DBLP DOI BibTeX RDF
15	Dongyang Yan, Mark Ingels, Giovanni Mangraviti, Yao Liu, Bertrand Parvais, Niamh Waldron, Nadine Collaert, Piet Wambacq	Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications.	NEWCAS	2019	DBLP DOI BibTeX RDF
15	Dong Wei 0008, Jincheng Zhang, Tianxiang Wu, Shunli Ma, Junyan Ren	A 22-40.5 GHz UWB LNA Design in 0.15um GaAs.	ASICON	2019	DBLP DOI BibTeX RDF
15	Jian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers 0001, Baile Chen	Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate.	DRC	2019	DBLP DOI BibTeX RDF
15	Yihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell	$W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity.	DRC	2019	DBLP DOI BibTeX RDF
15	W. Bellil, Abdelkader Aissat, Jean-Pierre Vilcot	Optimization and Comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs.	ANT/EDI40	2019	DBLP DOI BibTeX RDF
15	Shivendra Yadav, Chithraja Rajan, Dheeraj Sharma, Sanjay Balotiya	GaAs-SiGe Based Novel Device Structure of Doping Less Tunnel FET.	VDAT	2019	DBLP DOI BibTeX RDF
15	Ram Sharma Nitesh, Jagadheswaran Rajendran, Harikrishnan Ramiah, Asrulnizam Bin Abd Manaf	A 700MHz to 2.5GHz Cascode GaAs Power Amplifier for Multi-Band Pico-Cell Achieving 20dB Gain, 40dBm to 45dBm OIP3 and 66% Peak PAE.	IEEE Access	2018	DBLP DOI BibTeX RDF
15	Kazuya Yamamoto, Miyo Miyashita, Kenji Mukai, Shigeru Fujiwara, Satoshi Suzuki, Hiroaki Seki	Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications.	IEICE Trans. Electron.	2018	DBLP DOI BibTeX RDF
15	Ryo Nakao, Masakazu Arai, Takaaki Kakitsuka, Shinji Matsuo	Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers.	IEICE Trans. Electron.	2018	DBLP DOI BibTeX RDF
15	Yue Wu, HongLiang Lv, Yuming Zhang, Yimen Zhang, Shaojun Li	Analysis and Design of a Broadband Frequency Divider Using Modified Active Loads in GaAs HBT.	J. Circuits Syst. Comput.	2018	DBLP DOI BibTeX RDF
15	Xiaodong Zhang 0013, Xiaohong Sun, Feng Wang, Ting Tian, Huai Gao	Emitter ballasting resistor design of InGaP/GaAs power HBT for high linearity based on Volterra Series distortion analysis.	Microelectron. J.	2018	DBLP DOI BibTeX RDF
15	Qingkui Yu, Yi Sun, Zheng Li, Bo Mei, Xiaoliang Li, He Lv, Pengwei Li, Min Tang	Experimental and simulation study of the correlation between displacement damage and incident proton energy for GaAs devices.	Microelectron. Reliab.	2018	DBLP DOI BibTeX RDF
15	Shipeng Yi, Zhengwei Du	The influence of microwave pulse width on the thermal burnout effect of an LNA constructed by a GaAs PHEMT.	Microelectron. Reliab.	2018	DBLP DOI BibTeX RDF
15	M. Girard, Tristan Dubois, Patrick Hoffmann, Geneviève Duchamp	Effects of HPEM stress on GaAs low-noise amplifier from circuit to component scale.	Microelectron. Reliab.	2018	DBLP DOI BibTeX RDF
15	Shaojun Li, HongLiang Lv, Yimen Zhang, Yuming Zhang, Yue Wu, Muhammad Asif 0015	A high linearity, 8-GSa/s track-and-hold amplifier in GaAs HBT technology.	IEICE Electron. Express	2018	DBLP DOI BibTeX RDF
15	Yi Zhang 0022, Xiaopeng Li, Youtao Zhang, Qingguo Ye, Ying Zhang, Yufeng Guo, Hao Gao 0001	A 1.2 GSps, 8 bit RF DAC for multi-Nyquist applications in GaAs technology.	IEICE Electron. Express	2018	DBLP DOI BibTeX RDF
15	Yang Chen, Yuehang Xu, Jinhai Quan, Wei Tong, Ruimin Xu	A broadband GaAs high power millimeter wave amplifier with high gain and flatness.	IEICE Electron. Express	2018	DBLP DOI BibTeX RDF
15	Shaojun Li, HongLiang Lv, Yimen Zhang, Yuming Zhang, Yansong Zhang, Muhammad Asif 0015	A broadband high efficiency monolithic power amplifier with GaAs HBT.	IEICE Electron. Express	2018	DBLP DOI BibTeX RDF
15	Giorgio Polli, Marco Vittori, Walter Ciccognani, Sergio Colangeli, Ferdinando Costanzo, Alessandro Salvucci, Ernesto Limiti	Ka-/V-band self-biased LNAs in 70 nm GaAs/InGaAs Technology.	PRIME	2018	DBLP DOI BibTeX RDF
15	Linli Xie, Christopher M. Moore, Michael E. Cyberey, Souheil Nadri, Noah D. Sauber, Matthew F. Bauwens, Arthur W. Lichtenberger, N. Scott Barker, Robert M. Weikle	Micromachined probes with integrated GaAs Schottky diodes for on-wafer temperature sensing.	I2MTC	2018	DBLP DOI BibTeX RDF
15	Tatsuya Soma, Shinichi Hori, Kazuaki Kunihiro	A 200 MHz Bandwidth GaAs Switch-Mode Supply Modulator.	BCICTS	2018	DBLP DOI BibTeX RDF
15	Charles Nwakanma Akwuruoha, Zhirun Hu	55 to 59 GHz MMIC non-foster circuit enabled Class-J GaAs pHEMT power amplifier.	ICICDT	2018	DBLP DOI BibTeX RDF
15	Jeongsoo Park 0006, Jinhyun Kim, Jeong-Geun Kim	A Ka-band low noise amplifier in 0.15μm GaAs E-mode pHEMT technology.	ISOCC	2018	DBLP DOI BibTeX RDF
15	Yang Chen, Xu Yan, Han Wu, Liguo Sun	The Design and Miniaturization of 6-15 GHz Lumped-Element Wilkinson Power Divider Based on GaAs IPD Technology.	APCCAS	2018	DBLP DOI BibTeX RDF
15	Mircea Guina, Robert Sheehan, Riku Isoaho, Jukka Viheriala, Mikko Harjanne, Antonio Malacarne, Fabio Falconi, Timo Aalto, Frank H. Peters	Data Transmission at 1.3µm Using Hybrid Integrated Silicon Interposer and GalnNAs/GaAs Electroabsorption Modulator.	ECOC	2018	DBLP DOI BibTeX RDF
15	C. Hantschmann, Peter P. Vasil'ev, S. Chen, M. Liao, Alwyn J. Seeds, Huiyun Liu, Richard V. Penty, Ian H. White	Small-Signal Modulation and Analysis of Monolithic 1.3µm InAs/GaAs Quantum Dot Lasers on Silicon.	ECOC	2018	DBLP DOI BibTeX RDF
15	Zhen Liu 0003, Qing Wang, Chenliang Song, Yuhua Cheng 0001	Similarity-Based Difference Analysis Approach for Remaining Useful Life Prediction of GaAs-Based Semiconductor Lasers.	IEEE Access	2017	DBLP DOI BibTeX RDF
15	Kazuya Yamamoto, Miyo Miyashita, Takayuki Matsuzuka, Tomoyuki Asada, Kazunobu Fujii, Satoshi Suzuki, Teruyuki Shimura, Hiroaki Seki	Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response.	IEICE Trans. Electron.	2017	DBLP DOI BibTeX RDF
15	Ryota Kuroda, Seiya Kasai	Implementation of a noise-coexistence threshold logic architecture on a GaAs-based nanowire FET network.	Int. J. Parallel Emergent Distributed Syst.	2017	DBLP DOI BibTeX RDF
15	Xuanlong Chen, Liyuan Liu, Enliang Li	Metal defect localization of GaAs or Si based ICs by dynamic emission microscopy.	Microelectron. Reliab.	2017	DBLP DOI BibTeX RDF
15	Xiuqin Xu, Jiongjiong Mo, Wei Chen, Zhiyu Wang, Yong-Heng Shang, Yang Wang, Qin Zheng, Liping Wang, Zheng-Liang Huang, Fa-Xin Yu	A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs.	Microelectron. Reliab.	2017	DBLP DOI BibTeX RDF
15	Vincenzo d'Alessandro, Antonio Pio Catalano, Alessandro Magnani, Lorenzo Codecasa, Niccolò Rinaldi, Brian Moser, Peter J. Zampardi	Simulation comparison of InGaP/GaAs HBT thermal performance in wire-bonding and flip-chip technologies.	Microelectron. Reliab.	2017	DBLP DOI BibTeX RDF
15	Jorge Souto, José Luis Pura, Alfredo Torres, Juan Ignacio Jiménez López	Thermomechanical degradation of single and multiple quantum well AlGaAs/GaAs laser diodes.	Microelectron. Reliab.	2017	DBLP DOI BibTeX RDF
15	Keun-Kwan Ryu, Yong-Hwan Kim, Sung-Chan Kim	Low Noise and High Linearity GaAs LNA MMIC with Novel Active Bias Circuit for LTE Applications.	J. Inform. and Commun. Convergence Engineering	2017	DBLP DOI BibTeX RDF
15	Manh Duy Luong, Ryo Ishikawa, Yoichiro Takayama, Kazuhiko Honjo	Microwave Characteristics of an Independently Biased 3-Stack InGaP/GaAs HBT Configuration.	IEEE Trans. Circuits Syst. I Regul. Pap.	2017	DBLP DOI BibTeX RDF
15	Yuehong Dong, Yuehang Xu, Junheng Huang, Ying Ju, Lei He, Tiedi Zhang, Ruimin Xu, Bo Yan	A Ka-band GaAs MMIC quadrupler with high dynamic range and efficient harmonics rejection.	IEICE Electron. Express	2017	DBLP DOI BibTeX RDF
15	Ruirong Hao, Xiaodong Zhang 0013, Feng Wang, Huai Gao, Jianchun Cheng, Guann-Pyng Li	A fully integrated broadband, high-gain, high-power and high-efficiency UHF amplifier using GaAs HBT and GaN HEMT.	IEICE Electron. Express	2017	DBLP DOI BibTeX RDF
15	Tiedi Zhang, Lei Wang, Chung-Tse Michael Wu, Ruimin Xu	A GaAs passive mixer with an ultra-wide IF bandwidth.	IEICE Electron. Express	2017	DBLP DOI BibTeX RDF
15	Christopher A. Broderick, Shirong Jin Jin, Igor P. Marko, Konstanze Hind, Peter Ludewig, Zoe L. Bushell, Wolfgang Stolz, Eoin P. O'Reilly, Kerstin Volz, Stephen J. Sweeney, Judy M. Rorison	Dilute bismide / dilute nitride type ii quantum wells: Novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics.	ICTON	2017	DBLP DOI BibTeX RDF
15	Jeng-Han Tsai, Yi-Chien Cheng, Chuan-Chi Hung, Kun-Chan Chiang, Wei-Teung Li	A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process.	ICCE-Berlin	2017	DBLP DOI BibTeX RDF
15	Khemiri Kheareddine	Design channel add drop filter based on photonic crystal cavity resonator on GaAs substrate.	IINTEC	2017	DBLP DOI BibTeX RDF
15	Huixiang Chen 0001, Meng Wang, Yang Hu 0001, Mingcong Song, Tao Li 0006	GaaS workload characterization under NUMA architecture for virtualized GPU.	ISPASS	2017	DBLP DOI BibTeX RDF
15	Souheil Mouetsi, Foudil Zouach, Djamil Rechem	Flicker noise in AlGaAs/GaAs of high electron mobility heterostructure field-effect transistor at cryogenic temperature.	MIPRO	2017	DBLP DOI BibTeX RDF
15	Jinna Yan, Bharatha Kumar Thangarasu, Kiat Seng Yeo	RF mixer design techniques using GaAs process.	ASICON	2017	DBLP DOI BibTeX RDF
15	M. Ribate, Rachid Mandry, Mohamed Latrach, A. Errkik, Larbi El Abdellaoui	GaAs FET Broadband Power Amplifier for L and S Bands Applications.	ICCWCS	2017	DBLP DOI BibTeX RDF
15	Hui Dong Lee, Cheol Ho Kim, Sunwoo Kong, Seunghyun Jang, Kwang Seon Kim, Myung-Don Kim, Bonghyuk Park	A linear InGaP/GaAs HBT power amplifier for LTE B7 applications.	ISOCC	2017	DBLP DOI BibTeX RDF
15	Antal Ürmös, Zoltán Farkas, Tamas Sandor, Ákos Nemcsics	Soft-computing based classification and design of quantum dot nanostructures on GaAs substrate.	SISY	2017	DBLP DOI BibTeX RDF
15	Yuta Inagaki, Kazuya Hayase, Ryosuke Chiba, Hokuto Iijima, Takashi Meguro	Contribution of Treatment Temperature on Quantum Efficiency of Negative Electron Affinity (NEA)-GaAs.	IEICE Trans. Electron.	2016	DBLP DOI BibTeX RDF
15	Masayuki Hirao, Daichi Yamanaka, Takanori Yazaki, Jun Osako, Hokuto Iijima, Takao Shiokawa, Hikota Akimoto, Takashi Meguro	STM Study on Adsorption Structures of Cs on the As-Terminated GaAs(001) (2×4) Surface by Alternating Supply of Cs and O2.	IEICE Trans. Electron.	2016	DBLP DOI BibTeX RDF
15	Jincan Zhang, Yuming Zhang, Hongliang Lu, Yimen Zhang, Bo Liu 0031, Leiming Zhang, Jinchan Wang, Liwen Zhang	A Ku-Band Low-Phase-Noise Cross-Coupled VCO in GaAs HBT Technology.	J. Circuits Syst. Comput.	2016	DBLP DOI BibTeX RDF
15	Han-Han Lu, Jing-Ping Xu, Lu Liu, Li-Sheng Wang, Pui To Lai, Wing Man Tang	Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer.	Microelectron. Reliab.	2016	DBLP DOI BibTeX RDF
15	Ákos Nemcsics, Bálint Podör, Lajos Tóth, János Balázs, László Dobos, János Makai, Márton Csutorás, Antal Ürmös	Investigation of MBE grown inverted GaAs quantum dots.	Microelectron. Reliab.	2016	DBLP DOI BibTeX RDF
15	Massimo Vanzi, Giovanna Mura, Giulia Marcello, Kunhui Xiao	ESD tests on 850 nm GaAs-based VCSELs.	Microelectron. Reliab.	2016	DBLP DOI BibTeX RDF
15	Yang Liu 0106, Changchun Chai, Qingyang Fan, ChunLei Shi, Xiaowen Xi, Xinhai Yu, Yintang Yang	Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse.	Microelectron. Reliab.	2016	DBLP DOI BibTeX RDF
15	Won-Young Uhm, Keun-Kwan Ryu, Sung-Chan Kim	Design of a 94-GHz Single Balanced Mixer Using Planar Schottky Diodes with a Nano-Dot Structure on a GaAs Substrate.	J. Inform. and Commun. Convergence Engineering	2016	DBLP DOI BibTeX RDF
15	Ye Yuan, Yong Fan 0003, Zhe Chen, Lei Li, Ziqiang Yang	Ku band 2 watt TR chip for phased array based on GaAs technology.	IEICE Electron. Express	2016	DBLP DOI BibTeX RDF
15	Myunghoi Kim	A stepped-impedance true time delay line using GaAs MMIC technology.	IEICE Electron. Express	2016	DBLP DOI BibTeX RDF
15	Christopher A. Broderick, Wanshu Xiong, Stephen J. Sweeney, Eoin P. O'Reilly, Judy M. Rorison	Dilute bismide alloys grown on GaAs and InP substrates for improved near- and mid-infrared semiconductor lasers.	ICTON	2016	DBLP DOI BibTeX RDF
15	S. Benzeghda, F. Hobar, Didier Decoster	Improving the high-speed response of the GaAs metal-semiconductor-metal photodetector.	ICTON	2016	DBLP DOI BibTeX RDF
15	B. Zhang, H. D. Lu, W. G. Ning, F. M. Guo	Photocurrent optimize of InAs/GaAs p-i-p quantum dots infrared photodetectors.	NEMS	2016	DBLP DOI BibTeX RDF
15	Ikuma Ando, Masaaki Tanio, Masaharu Ito, Toshihide Kuwabara, Tsunehisa Marumoto, Kazuaki Kunihiro	Wireless D-band communication up to 60 Gbit/s with 64QAM using GaAs HEMT technology.	RWS	2016	DBLP DOI BibTeX RDF
15	Wojciech Knap, Dmytro B. But, Nina Dyakonova, Dominique Coquillat, Frederic Teppe, Jaroslaw Suszek, Agnieszka M. Siemion, Maciej Sypek, Krzesimir Szkudlarek, Grzegorz Cywinski, Ivan Yahniuk	Terahertz imaging with GaAs and GaN plasma field effect transistors detectors.	MIXDES	2016	DBLP DOI BibTeX RDF
15	Ruhan Thirayatorn, Pairot Moontragoon, Vittaya Amornkitbamrung, Santi Meansiri, Zoran Ikonic	Finite-difference calculation of the electronic structure of artificial graphene, the 2D hexagonal AlwGa1-wAs/GaAs structure with tunable interactions.	Comput. Phys. Commun.	2015	DBLP DOI BibTeX RDF
15	Kazuya Yamamoto, Hitoshi Kurusu, Miyo Miyashita, Satoshi Suzuki, Hiroaki Seki	A Current-Mirror-Based GaAs-HBT RF Power Detector Suitable for Base Terminal Monitoring in an HBT Power Stage.	IEICE Trans. Electron.	2015	DBLP DOI BibTeX RDF
15	Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Yoshinobu Sasaki, Satoshi Suzuki, Hiroaki Seki	A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module.	IEICE Trans. Electron.	2015	DBLP DOI BibTeX RDF
15	S. L. Da Silva, Emilson Ribeiro Viana, A. G. De Oliveira, G. M. Ribeiro, R. L. Da Silva	High Resolution Parameter-Space from a Two-Level Model on Semi-Insulating GaAs.	Int. J. Bifurc. Chaos	2015	DBLP DOI BibTeX RDF
15	Cunbo Zhang, Jian-de Zhang, Honggang Wang 0003, Guangxing Du	Burnout properties of microwave pulse injected on GaAs PHEMT.	Microelectron. Reliab.	2015	DBLP DOI BibTeX RDF
15	Hui Zhu, Kun Liu, Cong Xiong, Shiwei Feng 0001, Chunsheng Guo	The effect of external stress on the properties of AlGaAs/GaAs single quantum well laser diodes.	Microelectron. Reliab.	2015	DBLP DOI BibTeX RDF
15	Gergana I. Drandova	Temperature, humidity, and bias acceleration model for a GaAs pHEMT process.	Microelectron. Reliab.	2015	DBLP DOI BibTeX RDF
15	Jérémy Michaud, Guillaume Pedroza, Laurent Béchou, L. S. How, Olivier Gilard, David Veyrié, F. Laruelle, Stéphane Grauby	Investigations on electro-optical and thermal performances degradation of high power density GaAs-based laser diode in vacuum environment.	Microelectron. Reliab.	2015	DBLP DOI BibTeX RDF
15	K. Adokanou, Karim Inal, Pierre Montmitonnet, F. Pressecq, Barbara Bonnet, J. L. Muraro	Investigation on the effect of external mechanical stress on the DC characteristics of GaAs microwave devices.	Microelectron. Reliab.	2015	DBLP DOI BibTeX RDF
15	Won-Young Uhm, Keun-Kwan Ryu, Sung-Chan Kim	A 94-GHz Phased Array Antenna Using a Log-Periodic Antenna on a GaAs Substrate.	J. Inform. and Commun. Convergence Engineering	2015	DBLP DOI BibTeX RDF
15	Zahra Hemmat, Enrique Moreno, Farhood Rasouli, Sina Haji Alizad	Effect of radial structure on the performance of lateral high-power GaAs photoconductive switch.	EIT	2015	DBLP DOI BibTeX RDF
15	Takehiro Fukushima, Susumu Shinohara, Satoshi Sunada, Takahisa Harayama, Koichiro Sakaguchi, Yasunori Tokuda	Transverse magnetic emissions of GaAs unstrained quantum-well microcavity lasers.	ICTON	2015	DBLP DOI BibTeX RDF
15	Alexei Sirbu, Vladimir Iakovlev, Stephen Tiefenbach Keller, A. Mereuta, A. Caliman, Eli Kapon	Advanced 1.3 µm vertical cavity lasers based on AlInGaAs/InP-AlGaAs/GaAs fused structures.	ICTON	2015	DBLP DOI BibTeX RDF
15	Ming Liu 0006, Tao Li 0006, Neo Jia, Andy Currid, Vladimir Troy	Understanding the virtualization "Tax" of scale-out pass-through GPUs in GaaS clouds: An empirical study.	HPCA	2015	DBLP DOI BibTeX RDF
15	Yuki Takagi, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo	A High-Efficiency Low-Distortion Cascode Power Amplifier Consisting of Independently Biased InGaP/GaAs HBTs.	IEICE Trans. Electron.	2014	DBLP DOI BibTeX RDF
15	Marco Pirola, Roberto Quaglia, Giovanni Ghione, Walter Ciccognani, Ernesto Limiti	13-bit GaAs serial-to-parallel converter with compact layout for core-chip applications.	Microelectron. J.	2014	DBLP DOI BibTeX RDF
15	Fan-Hsiu Huang, Yue-Ming Hsin	A dual-gate 2nd/3rd-order subharmonic injection-locked oscillator in GaAs PHEMT.	Microelectron. J.	2014	DBLP DOI BibTeX RDF
15	Bahniman Ghosh, Shibir Basak, Pranav Kumar Asthana	Performance Improvement in Nanoscale Ge-GaAs Heterojunction Junctionless Tunnel FET Using a Dual Material Gate.	J. Low Power Electron.	2014	DBLP DOI BibTeX RDF
15	Ming-Hung Weng, Chao-Hung Chen, Che-Kai Lin, Shih-Hui Huang, Jhih-Han Du, Sheng-Wen Peng, Walter Wohlmuth, Frank Yung-Shi Chou, Chang-Hwang Hua	Investigation of high performance Edge Lifted Capacitors reliability for GaAs and GaN MMIC technology.	Microelectron. Reliab.	2014	DBLP DOI BibTeX RDF
15	Robert S. Howell, Randall Lewis, H. George Henry, Harold Hearne, Deas Brown, Dale Dawson, Andris Ezis	Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size.	Microelectron. Reliab.	2014	DBLP DOI BibTeX RDF