Search results for "GaAs"

Hits ?▲	Authors	Title	Venue	Year	Link	Author keywords
15	Florent E. Angly, Dana Willner, Alejandra Prieto-Davó, Robert A. Edwards, Robert Schmieder, Rebecca Vega-Thurber, Dionysios A. Antonopoulos, Katie Barott, Matthew T. Cottrell, Christelle Desnues, Elizabeth A. Dinsdale, Mike Furlan, Matthew Haynes, Matthew R. Henn, Yongfei Hu, David L. Kirchman, Tracey McDole, John D. McPherson, Folker Meyer, R. Michael Miller, Egbert Mundt, Robert K. Naviaux, Beltran Rodriguez-Mueller, Rick Stevens, Linda Wegley, Lixin Zhang 0006, Baoli Zhu, Forest Rohwer	The GAAS Metagenomic Tool and Its Estimations of Viral and Microbial Average Genome Size in Four Major Biomes.	PLoS Comput. Biol.	2009	DBLP DOI BibTeX RDF
15	Christopher M. Behrens, Antonios Armaou	Optimal design and operation of a multiscale GaAs/AlAs deposition process.	ACC	2009	DBLP DOI BibTeX RDF
15	B. K. Mishra 0001, Lochan Jolly	Effect of Intensity Modulated Optical Illumination on the Y Parameters of the GaAs MESFET.	ARTCom	2009	DBLP DOI BibTeX RDF
15	Jing Cui, Bingzhen Zhang, Jun Liu 0005, Chengyang Xue, Guowen Liu, Xiaojuan Jia	Design of a novel sensor based on piezo-resistive effect of GaAs/AlGaAs/InGaAs PHEMT.	NEMS	2009	DBLP DOI BibTeX RDF
15	Han Peng, T. P. Chow, Mona Mostafa Hella	A Highly Efficient Interleaved DC-DC Converter using Coupled Inductors in Gaas Technology.	ISCAS	2009	DBLP DOI BibTeX RDF
15	Kenneth Eng-Kian Lee	High quality metamorphic graded buffers with lattice-constants intermediate to GaAs an InP for device applications.		2009	RDF
15	Koichi Maezawa, Ikuo Soga, Shigeru Kishimoto, Takashi Mizutani, Kazuhiro Akamatsu	A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch.	IEICE Trans. Electron.	2008	DBLP DOI BibTeX RDF
15	Ryo Ishikawa, Takuya Abe, Kazuhiko Honjo, Masao Shimada	InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems.	IEICE Trans. Electron.	2008	DBLP DOI BibTeX RDF
15	Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata	1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET.	IEICE Trans. Electron.	2008	DBLP DOI BibTeX RDF
15	Hong-Quan Zhao, Seiya Kasai, Tamotsu Hashizume, Nan-Jian Wu	Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures.	IEICE Trans. Electron.	2008	DBLP DOI BibTeX RDF
15	Helmut Jung, Hervé Blanck, Wolfgang Bösch, Jim Mayock	GaAs Industry in Europe - Technologies, Trends and New Developments.	IEICE Trans. Electron.	2008	DBLP DOI BibTeX RDF
15	Kiyoyuki Ihara	The Temperature Dependence of a GaAs pHEMT Wideband IQ Modulator IC.	IEICE Trans. Electron.	2008	DBLP DOI BibTeX RDF
15	Mi-Ra Kim, Seong-Dae Lee, Yeon-Sik Chae, Jin Koo Rhee	Design and Fabrication of Planar GaAs Gunn Diodes.	IEICE Trans. Electron.	2008	DBLP DOI BibTeX RDF
15	P. Aristizábal, R. L. Restrepo, W. Ospina, C. A. Duque	Hydrostatic pressure effects on the binding and transition energies for Wannier excitons in GaAs/Ga1-xAlxAs quantum wells.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Krzysztof Gutowski, Robert P. Sarzala, Wlodzimierz Nakwaski	Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	S. M. Ramos-Arteaga, N. Porras-Montenegro, Gerardo J. Vázquez, Marcelo del Castillo-Mussot	Effects of geometry, applied hydrostatic pressure and magnetic field on the electron-hole transition energy in a GaAs-Ga1-xAlxAs pillbox immersed in a system of Ga1-yAlyAs.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	S. T. Pérez-Merchancano, R. Franco, Jereson Silva Valencia	Impurity states in a spherical GaAs-Ga1-x AlxAs quantum dots: Effects of hydrostatic pressure.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Francisco Perez-Martinez, K. D. Petersson, Ian Farrer, D. Anderson, G. A. C. Jones, David A. Ritchie, C. G. Smith	Realization of a GaAs/AlGaAs-based quantum cellular automata cell.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Jorge Ricardo Mejía-Salazar, N. Porras-Montenegro	Landé g-factor and cyclotron effective mass in a cylindrical GaAs-(Ga, Al)As quantum pillbox under the influence of an axis-parallel applied magnetic field.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	E. Tangarife, S. Y. López, M. de Dios-Leyva, Luiz Eduardo Oliveira, Carlos Alberto Duque	Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs/Ga1-xAlxAs quantum wells.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Qi Wang 0036, Xiaomin Ren, Feihua Wang, Jianyou Feng, Jihe Lv, Jing Zhou, Shiwei Cai, Hui Huang 0002, Yongqing Huang	LP-MOCVD growth of ternary BxGa1-xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Ludvik Smrcka, Nataliya A. Goncharuk, P. Svoboda, P. Vasek, Yu. Krupko, W. Wegscheider	Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	N. Porras-Montenegro, C. A. Perdomo-Leiva, E. Reyes-Gómez, H. S. Brandi, L. E. Oliveira	Effect of the Dresselhaus spin splitting on the effective Landé g-factor in GaAs-(Ga, Al)As quantum wells under in-plane or growth-direction magnetic fields.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	G. E. Zardas, P. H. Yannakopoulos, Chrys I. Symeonides, Marián Veselý, P. C. Euthymiou	A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under alpha-particle irradiation.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Isaac Rodríguez-Vargas, O. Y. Sánchez-Barbosa, D. A. Contreras-Solorio, S. J. Vlaev	Miniband structure of parabolic GaAs/AlxGa1-xAs superlattices.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	R. Srnánek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala	Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	R. Srnánek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala	Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Luiz Eduardo Oliveira, M. de Dios-Leyva, Carlos Alberto Duque	Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Buket D. Barkana	Characteristics of AlGaAs/GaAs heterostructure RT-SCR model.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Z. Barticevic, Monica Pacheco, Carlos Alberto Duque, Luiz Eduardo Oliveira	Magnetoexciton states and diamagnetic shifts in GaAs-Ga1-xAlxAs quantum dots/ultrathin quantum wells under growth-direction magnetic fields.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	M. M. Habchi, Ahmed Rebey, B. El Jani	AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Carlos Alberto Duque, M. de Dios-Leyva, Luiz Eduardo Oliveira	Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	J. C. Martínez-Orozco, Isaac Rodríguez-Vargas, Miguel Eduardo Mora-Ramos, C. A. Duque	Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Per-Olof Holtz, Evgenii S. Moskalenko, Mats Larsson, K. F. Karlsson, W. V. Schoenfeld, P. M. Petroff	Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	F. J. Culchac, N. Porras-Montenegro, J. C. Granada, A. Latgé	Energy spectrum in a concentric double quantum ring of GaAs-(Ga, Al)As under applied magnetic fields.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Jijun Xiong, Jian Wang, Wendong Zhang 0001, Chenyang Xue, Binzhen Zhang, Jie Hu	Piezoresistive effect in GaAs/InxGa1-xAs/AlAs resonant tunneling diodes for application in micromechanical sensors.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	S. T. Ahmad, David G. Hasko	Broadband microwave spectroscopy of a GaAs point contact.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Isaac Rodríguez-Vargas, Miguel Eduardo Mora-Ramos, C. A. Duque	Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double delta-doped GaAs quantum wells.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Stoyan Jelev-Vlaev, Jesus Madrigal-Melchor, V. M. González-Robles, D. A. Contreras-Solorio	Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	X. A. Pichardo, V. M. González-Robles, S. J. Vlaev	Mean lifetimes of quasi-bound electronic states in rectangular GaAs/AlGaAs barriers.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Pablo Villamil, Carlos Cabra, N. Porras-Montenegro	Polaron effects on the energy of a hydrogenic donor impurity in GaAs-(Ga, Al)As quantum-well wires.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Pavel Hazdra, Jan Voves, J. Oswald, K. Kuldová, A. Hospodková, Eduard Hulicius, Jirí Pangrác	Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	R. A. Rupani, Siddhartha Ghosh, X. Su, P. Bhattacharya	Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors.	Microelectron. J.	2008	DBLP DOI BibTeX RDF
15	Jiri Jakovenko, Miroslav Husák, T. Lalinskytfh, M. Drzik, G. Vanko	Design and Modeling of Micromechanical GaAs based Hot Plate for Gas Sensors	CoRR	2008	DBLP BibTeX RDF
15	Yang Ju, Tetsuya Kobayashi, Hitoshi Soyama	Development of a Nanostructual Microwave Probe Based on GaAs	CoRR	2008	DBLP BibTeX RDF
15	Se Woon Kim, Kang Seob Roh, Seung Hwan Seo, Kwan Young Kim, Gu Cheol Kang, Sunyeong Lee, Chang Min Choi, So Ra Park, Jun Hyun Park, Ki Chan Chun, Kwan Jae Song, Dae Hwan Kim, Dong Myong Kim	Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation.	Microelectron. Reliab.	2008	DBLP DOI BibTeX RDF
15	Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou	InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability.	Microelectron. Reliab.	2008	DBLP DOI BibTeX RDF
15	Mohammad Soroosh, Mohammad Kazem Moravvej-Farshi, Kamyar Saghafi	A simple empirical model for calculating gain and excess noise in GaAs/AlξGa1-ξAs APDs (0.3≤ξ≤0.6).	IEICE Electron. Express	2008	DBLP DOI BibTeX RDF
15	Shanmugam Saravanan, Takashisa Harayama	Investigation of InxGa1-xAs strain reducing layers effects on InAs/GaAs quantum dots.	IEICE Electron. Express	2008	DBLP DOI BibTeX RDF
15	Gilgueng Hwang, Primoz Podrzaj, Hideki Hashimoto	In-situ robust nanorobotic resistance spot welding of InGaAs/GaAs helical nanobelts without pretreatment.	IROS	2008	DBLP DOI BibTeX RDF
15	Farahiyah Mustafa, Nurul Izni Rusli, Abdul Manaf Hashim	Design and Characterization of Planar Antennas on the Semi-Insulated GaAs for Rectenna Devices.	Asia International Conference on Modelling and Simulation	2008	DBLP DOI BibTeX RDF	Dipole antenna, CPW, Rectenna, IQ Chips
15	Sachin M. Narwade, Nandita DasGupta	Process Optimization for a Transimpedance Pre-Amplifier Using Self-Aligned GaAs MESFETs on Epitaxial Wafers.	ICETET	2008	DBLP DOI BibTeX RDF
15	Kazuya Yamamoto, Takao Moriwaki, Hiroyuki Otsuka, Nobuyuki Ogawa, Kosei Maemura, Teruyuki Shimura	A CDMA InGaP/GaAs-HBT MMIC Power Amplifier Module Operating With a Low Reference Voltage of 2.4 V.	IEEE J. Solid State Circuits	2007	DBLP DOI BibTeX RDF
15	Kevin W. Kobayashi	Linearized Darlington Cascode Amplifier Employing GaAs PHEMT and GaN HEMT Technologies.	IEEE J. Solid State Circuits	2007	DBLP DOI BibTeX RDF
15	Andre G. Metzger, Ravi Ramanathan, Jiang Li, Hsiang-Chih Sun, Cristian Cismaru, Hongxiao Shao, Lance Rushing, Kenneth P. Weller, Ce-Jun Wei, Yu Zhu, Alexei Klimashov, Yevgeniy A. Tkachenko, Bin Li, Peter J. Zampardi	An InGaP/GaAs Merged HBT-FET (BiFET) Technology and Applications to the Design of Handset Power Amplifiers.	IEEE J. Solid State Circuits	2007	DBLP DOI BibTeX RDF
15	Tohru Oka, Masatomo Hasegawa, Michitoshi Hirata, Yoshihisa Amano, Yoshiteru Ishimaru, Hiroshi Kawamura, Keiichi Sakuno	A High-Power Low-Distortion GaAs HBT Power Amplifier for Mobile Terminals Used in Broadband Wireless Applications.	IEEE J. Solid State Circuits	2007	DBLP DOI BibTeX RDF
15	Kazuya Yamamoto, Miyo Miyashita, Nobuyuki Ogawa, Takeshi Miura, Teruyuki Shimura	3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology.	IEICE Trans. Electron.	2007	DBLP DOI BibTeX RDF
15	Mitsuhiro Hanabe, Yahya Moubarak Meziani, Taiichi Otsuji, Eiichi Sano, Tanemasa Asano	Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer.	IEICE Trans. Electron.	2007	DBLP DOI BibTeX RDF
15	Hung-tsao Hsu, Yue-Ming Hsin	Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement.	IEICE Trans. Electron.	2007	DBLP DOI BibTeX RDF
15	Hiroyuki Shinojima, Ryuzi Yano	Annealing Induced Diffusion Dynamics in As Ion-Implanted GaAs.	IEICE Trans. Electron.	2007	DBLP DOI BibTeX RDF
15	Kouji Ishikura, Isao Takenaka, Hidemasa Takahashi, Kouichi Hasegawa, Kazunori Asano, Naotaka Iwata	High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station.	IEICE Trans. Electron.	2007	DBLP DOI BibTeX RDF
15	Kazuya Nishihori, Yasuyuki Miyamoto	Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs.	IEICE Trans. Electron.	2007	DBLP DOI BibTeX RDF
15	Neila Hizem, A. Kalboussi, R. Adhiri, A. Souifi	Blue/green luminescence based on Zn(S)Se/GaAs heterostructures.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	Deping Xiong, Xiaomin Ren, Qi Wang 0036, Aiguang Ren, Jing Zhou, Jihe Lv, Shiwei Cai, Hui Huang 0002, Yongqing Huang	Epitaxial lateral overgrowth of InP/GaAs (100) heterostructures by metalorganic chemical vapor deposition.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	Abdul Manaf Hashim, Seiya Kasai, Kouichi Iizuka, Tamotsu Hashizume, Hideki Hasegawa	Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	Naoki Kakuda, Shiro Tsukamoto, Akira Ishii, Katsutoshi Fujiwara, Toshikazu Ebisuzaki, Koichi Yamaguchi, Yasuhiko Arakawa	Surface reconstructions on Sb-irradiated GaAs(001) formed by molecular beam epitaxy.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	Jing Zhou, Xiaomin Ren, Qi Wang 0036, D. P. Xiong, Hui Huang 0002, Yongqing Huang	Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	Jing Zhou, Xiaomin Ren, Qi Wang 0036, Yongqing Huang, Jihe Lv, Hui Huang 0002, Shiwei Cai	Temperature-controlled self-organized InP nanostructures grown on GaAs(100) substrate by MOCVD.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	Ali Missaoui, Lotfi Beji, Mounir Gaidi, Zina Harrabi, Hafedh Ben Ouada, Abdelaziz Bouazizi	Structural characterisation of CdS layers deposited on porous p-type GaAs.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	Jia-Chuan Lin, Yu-Chieh Chen, Wei-Chih Tsai	The study of delta-doped InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor.	Microelectron. J.	2007	DBLP DOI BibTeX RDF
15	P. J. van der Wel, J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh, Y. C. Wang	Effect of oval defects in GaAs on the reliability of SiNx metal-insulator-metal capacitors.	Microelectron. Reliab.	2007	DBLP DOI BibTeX RDF
15	Z. Tang, P. D. Ye, D. Lee, Chu-Ryang Wie	Electrical measurements of voltage stressed Al2O3/GaAs MOSFET.	Microelectron. Reliab.	2007	DBLP DOI BibTeX RDF
15	K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, T. S. Low, M. Iwamoto, M. E. Adamski, R. L. Shimon, Timothy E. Shirley, M. Bonse, F. G. Kellert, D. C. D'Avanzo	Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology.	Microelectron. Reliab.	2007	DBLP DOI BibTeX RDF
15	Anita A. Villanueva	Electrical degradation mechanisms of RF power GaAs PHEMTs.		2007	RDF
15	Tzung-Han Wu, Chinchun Meng	5.2/5.7-GHz 48-dB Image Rejection GaInP/GaAs HBT Weaver Down-Converter Using LO Frequency Quadrupler.	IEEE J. Solid State Circuits	2006	DBLP DOI BibTeX RDF
15	Jinho Jeong, Youngwoo Kwon	A fully integrated V-band PLL MMIC using 0.15-μm GaAs pHEMT technology.	IEEE J. Solid State Circuits	2006	DBLP DOI BibTeX RDF
15	Itaru Nakagawa, Ryo Ishikawa, Kazuhiko Honjo, Masao Shimada	InGaP/GaAs HBT MMIC Amplifier with Active Balun for Ultra-Wideband Self-Complementary Antenna.	IEICE Trans. Electron.	2006	DBLP DOI BibTeX RDF
15	Masato Seki, Ryo Ishikawa, Kazuhiko Honjo	Microwave Class-F InGaP/GaAs HBT Power Amplifier Considering up to 7th-Order Higher Harmonic Frequencies.	IEICE Trans. Electron.	2006	DBLP DOI BibTeX RDF
15	Kazuhiro Mochizuki, Ken-ichi Tanaka, Takashi Shiota, Takafumi Taniguchi, Hiroyuki Uchiyama	Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation.	IEICE Trans. Electron.	2006	DBLP DOI BibTeX RDF
15	María J. Cáceres, José A. Carrillo 0001, Armando Majorana	Deterministic Simulation of the Boltzmann-Poisson System in GaAs-Based Semiconductors.	SIAM J. Sci. Comput.	2006	DBLP DOI BibTeX RDF
15	Ahmed Rebey, W. Fathallah, B. El Jani	In depth study of the compensation in annealed heavily carbon doped GaAs.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	W. Limmer, J. Daeubler, M. Glunk, T. Hummel, W. Schoch, Rolf Sauer	(Ga, Mn)As on patterned GaAs(001) substrates: Growth and magnetotransport.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Volodymyr Grimalsky, Edmundo Gutiérrez, Abel García, Svetlana V. Koshevaya	Resonant excitation of microwave acoustic modes in n-GaAs film.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, Marián Veselý, P. C. Euthymiou	Temperature dependence of Si-GaAs energy gap using photoconductivity spectra.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	R. Ajjel, Hichem Maaref	Electrical properties of GaAs-Al0.46Ga0.54As superlattice within a wider quantum well.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	V. Mlinar, François M. Peeters	Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	J. C. Lin, P. W. Fry, Richard A. Hogg, Mark Hopkinson, Ian Mark Ross, A. G. Cullis, R. S. Kolodka, A. I. Tartakovskii, M. S. Skolnick	The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Satyabrata Jit, Neti V. L. Narasimha Murty	Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	S. Shrestha, Chandan Kumar Sarkar	Comparative studies on electronic transport due to the reduced dimensionality at the heterojunctions of GaAs/A1xGa(1-x)As and GaxIn(1-x)As/InP systems at low temperatures.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Paola Atkinson, S. P. Bremner, D. Anderson, G. A. C. Jones, David A. Ritchie	Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Yuan Tian, Hong Wang 0008	Analysis of DC characteristics of GaAs double heterojunction bipolar transistors (DHBTs) with a pseudomorphic GaAsSb base.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Javier Miguel-Sánchez, A. Guzmán, U. Jahn, E. Luna, Elías Muñoz	Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWs.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Javier Miguel-Sánchez, Álvaro de Guzmán, José María Ulloa, Miguel Montes 0001, Adrián Hierro, Elías Muñoz	MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)B.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	J. Ng, Mohamed Missous	Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3mum applications.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	V. A. Volodin, M. D. Efremov	Photoluminescence study of type-II GaAs quantum well wires grown on nano-faced (311)A surface: Quasi-1D exciton observation?	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Aiguang Ren, Xiaomin Ren, Qi Wang 0036, Deping Xiong, Hui Huang 0002, Yongqing Huang	Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	W. Limmer, M. Glunk, J. Daeubler, T. Hummel, W. Schoch, C. Bihler, Hans Huebl, Martin S. Brandt, S. T. B. Goennenwein, Rolf Sauer	Magnetic anisotropy in (Ga, Mn)As on GaAs(113)As studied by magnetotransport and ferromagnetic resonance.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	P. Strichovanec, R. Kúdela, I. Vávra, Jozef Novák	Characterization of QWIP structures prepared on GaAs-patterned substrates.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	Shiro Tsukamoto, G. R. Bell, Yasuhiko Arakawa	Heteroepitaxial growth of InAs on GaAs(001) by in situ STM located inside MBE growth chamber.	Microelectron. J.	2006	DBLP DOI BibTeX RDF
15	W. Dreyer, F. Duderstadt, S. Eichler, M. Jurisch	Stress analysis and bending tests for GaAs wafers.	Microelectron. Reliab.	2006	DBLP DOI BibTeX RDF