Search results for "GaAs"

Hits ?▲	Authors	Title	Venue	Year	Link
15	Alina Caddemi, Giovanni Crupi, Nicola Donato	Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs.	Microelectron. Reliab.	2006	DBLP DOI BibTeX RDF
15	Yeong-Chang Chou, Denise Leung, Ronald Grundbacher, Richard Lai 0002, Quin Kan, P. H. Liu, David Eng, Thomas R. Block, Aaron K. Oki	Gate metal interdiffusion induced degradation in space-qualified GaAs PHEMTs.	Microelectron. Reliab.	2006	DBLP DOI BibTeX RDF
15	Hou-Kuei Huang, Chou-Sern Wang, Mau-Phon Houng, Yeong-Her Wang	Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses.	Microelectron. Reliab.	2006	DBLP DOI BibTeX RDF
15	Yang-Hua Chang, Hui-Fen Hsu	Determination of thermal resistance using Gummel measurement for InGaP/GaAs HBTs.	Microelectron. Reliab.	2006	DBLP DOI BibTeX RDF
15	Meik Huber, Stefan von der Mark, Georg Böck	A Dual Stage GaAs Amplifier for a K-Band Direct Receiver.	ICECS	2006	DBLP DOI BibTeX RDF
15	Shahram Mohammad Nejad, Maryam Pourmahyabadi, Ali Asghar Amidian	Optimal Dark Current Reduction in Quantum Well 9 μm GaAs/AlGaAs Infrared Photodetectors With Improved Detectivity.	ICECS	2006	DBLP DOI BibTeX RDF
15	Alois P. Freundorfer	Integrated Electro-Absorption Modulator and GaAs HBT Driver Circuit.	CCECE	2006	DBLP DOI BibTeX RDF
15	Anika Kumar	Growth of thick lattice mismatched layers of GaxIn1-xAsySb1-y on GaAs substrates from quaternary melts.		2006	RDF
15	Myung-Jun Choe, Kwang-Hyun Baek, Mesfin Teshome	A 1.6-GS/s 12-bit return-to-zero GaAs RF DAC for multiple Nyquist operation.	IEEE J. Solid State Circuits	2005	DBLP DOI BibTeX RDF
15	Sten E. Gunnarsson, Camilla Kärnfelt, Herbert Zirath, Rumen Kozhuharov, Dan Kuylenstierna, Arne Alping, Christian Fager	Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology.	IEEE J. Solid State Circuits	2005	DBLP DOI BibTeX RDF
15	Akio Wakejima, Takahiro Asano, Takafumi Hirano, Masahiro Funabashi, Kohji Matsunaga	C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use.	IEEE J. Solid State Circuits	2005	DBLP DOI BibTeX RDF
15	Masahiro Nakayama, Shinichi Narita, Hiroki I. Fujishiro	Noise Analysis of GaAs-MESFETs by Physics-Based Circuit Simulator Employing Monte Carlo Technique.	IEICE Trans. Electron.	2005	DBLP DOI BibTeX RDF
15	Takaki Niwa, Takashi Ishigaki, Naoto Kurosawa, Hidenori Shimawaki, Shinichi Tanaka	Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers.	IEICE Trans. Electron.	2005	DBLP DOI BibTeX RDF
15	Satoshi Kurachi, Toshihiko Yoshimasu	Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications.	IEICE Trans. Electron.	2005	DBLP DOI BibTeX RDF
15	Che-ming Wang, Kuang-Po Hsueh, Yue-Ming Hsin	Collector Doping Design for Improving DC and RF Performance in InGaP/GaAs HBTs before Onset of Kirk Effect.	IEICE Trans. Electron.	2005	DBLP DOI BibTeX RDF
15	Chinchun Meng, Bo-Chen Tsou, Sheng-Che Tseng	Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements.	IEICE Trans. Electron.	2005	DBLP DOI BibTeX RDF
15	Kiyoshi Aikawa, Kazuhiko Honjo	Experimental Verification of Lumped Element Circuit Synthesis Method for Class-F Microwave Amplifier Using InGaP/GaAs HBT.	IEICE Trans. Electron.	2005	DBLP DOI BibTeX RDF
15	Ashwin Ashok, Richard Akis, Dragica Vasileska, David K. Ferry	Spontaneous spin polarization in GaAs/AlGaAs split-gate heterostructures.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Kazunari Ozasa, Mizuo Maeda, Masahiko Hara	Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	A. P. Castro, H. W. Leite Alves	Ab initio study of the nitridation of the GaAs (100) surfaces.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	F. A. P. Osório, A. B. A. Marques, P. C. M. Machado, A. N. Borges	The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1-x as quantum dots.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Carlos Alberto Duque, N. Porras-Montenegro, Z. Barticevic, Monica Pacheco, Luiz Eduardo Oliveira	Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	A. F. G. Monte, J. F. R. Cunha, M. A. P. Soler, S. W. Silva, A. A. Quivy, Paulo César de Morais	Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	J. Misiewicz, R. Kudrawiec, M. Motyka, J. Andrzejewski, D. Gollub, Alfred Forchel	Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Pablo Villamil, Carlos Cabra, N. Porras-Montenegro	Excited states and infrared transition energies of a donor impurity in cylindrical GaAs-Ga0.6Al0.4As quantum well wires under the action of an applied magnetic field.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Sung-Ho Hwang, J. C. Shin, Jin Dong Song, Won Jun Choi, Jung-Il Lee, H. Han	Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	G. E. Zardas, P. H. Yannakopoulos, M. Ziska, Chrys I. Symeonides, P. C. Euthymiou, O. Csabay	Dependence of GaAs: Si persistent photoconductivity on temperature and alpha-particle irradiation.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	S. J. Vlaev, Isaac Rodríguez-Vargas, Luis Manuel Gaggero-Sager	Mean life times of quasi-bound states in delta-doped GaAs quantum wells.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Isaac Rodríguez-Vargas, Luis Manuel Gaggero-Sager	Thomas-Fermi approximation of double n-type delta-doped GaAs quantum wells: sub-band and transport calculations.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	C. L. N. Oliveira, Andrey Chaves, E. W. S. Caetano, M. H. Degani, José Alexander de King Freire	Quantum confinement of carriers in heterostructured GaAs/GaP quantum wires.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	A. Belghachi	Modelling of perimeter recombination in GaAs solar cells.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	S. L. Morelhão, L. H. Avanci, R. Freitas, A. A. Quivy	Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	M. G. Bezerra, José Alexander de King Freire, V. N. Freire, Gil de Aquino Farias, F. M. S. Lima, A. L. A. Fonseca, O. A. C. Nunes Jr.	Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Tsai-Yu Huang, Chao-Ping Huang, Yi-Hsing Chiu, C.-T. Liang, M. Y. Simmons, David A. Ritchie	'Mobility gap' of a spin-split GaAs two-dimensional electron gas.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Miguel L. Crespillo, J. L. Sacedón, B. A. Joyce, P. Tejedor	Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110).	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Carlos L. Beltrán Ríos, N. Porras-Montenegro	Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs-AlGaAs quantum wells.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Lotfi Beji, L. Bouzaïene, B. Ismaïl, Laarbi Sfaxi, Hichem Maaref, Hafedh Ben Ouada	Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	R. G. Mani	AC driven zero-resistance states and oscillatory magnetoresistance in GaAs/AlGaAs devices.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta	Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Katsumoto Ikeda, Fujio Minami, Nobuyuki Koguchi	Acoustical phonon dephasing in GaAs quantum dots.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	W. R. Clarke, Adam P. Micolich, A. R. Hamilton, M. Y. Simmons, Koji Muraki, Y. Hirayama	Fabrication and characterization of a 2D hole system a in novel (311)A GaAs SISFET.	Microelectron. J.	2005	DBLP DOI BibTeX RDF
15	Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez	Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions.	Microelectron. Reliab.	2005	DBLP DOI BibTeX RDF
15	Takayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi	Degradation mechanisms of GaAs PHEMTs in high humidity conditions.	Microelectron. Reliab.	2005	DBLP DOI BibTeX RDF
15	Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali	DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.	Microelectron. Reliab.	2005	DBLP DOI BibTeX RDF
15	Cezary Sydlo, Jochen Sigmund, Bastian Mottet, Hans L. Hartnagel	Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyning.	Microelectron. Reliab.	2005	DBLP DOI BibTeX RDF
15	Charles S. Whitman, Michael Meeder	Determining constant voltage lifetimes for silicon nitride capacitors in a GaAs IC process by a step stress method.	Microelectron. Reliab.	2005	DBLP DOI BibTeX RDF
15	Loren N. Pfeiffer, Kenneth W. West, Robert L. Willett, Hidefumi Akiyama, Leonid P. Rokhinson	Nanostructures in GaAs fabricated by molecular beam epitaxy.	Bell Labs Tech. J.	2005	DBLP DOI BibTeX RDF
15	Gaetano Palumbo, Pasquale Tommasino, Alessandro Trifiletti	Optimized design of source coupled logic gates in GaAs HEMT technology.	ISCAS (4)	2005	DBLP DOI BibTeX RDF
15	Yiming Lou, Panagiotis D. Christofides	Feedback control of surface roughness of GaAs (0 0 1) thin films using kinetic Monte Carlo models.	Comput. Chem. Eng.	2004	DBLP DOI BibTeX RDF
15	Andrzej Janutka, Lucjan Jacak, J. Krasnyj, Pawel Machnikowski	Phonon Dephasing of the Exciton in InAs/GaAs Quantum Dots.	Open Syst. Inf. Dyn.	2004	DBLP DOI BibTeX RDF
15	Yves Baeyens, Marino Juan Martinez	Introduction to the Special Issue on the 25th Annual IEEE GaAs Integrated Circuits Conference.	IEEE J. Solid State Circuits	2004	DBLP DOI BibTeX RDF
15	Ahmed Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laugt	Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	Ahmed Rebey, M. M. Habchi, Zohra Benzarti, B. El Jani	Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	Ruiying Shi, Min Gong, Xunchun Liu, Haifen Sun, Zhipeng Yuan	Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF characteristics related with orientations.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	L. Bouzaïene, Laarbi Sfaxi, Hichem Maaref	Self-organized InAs/GaAs quantum dots multilayers with growth interruption emitting at 1.3mum.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	Steven John Lade, Ahmad Zahedi	A revised ideal model for AlGaAs/GaAs quantum well solar cells.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	L. Diago-Cisneros, H. Rodríguez-Coppola, Rolando Pérez-Alvarez, Pedro Pereyra	Interesting coupling phenomena of heavy and light holes in a (GaAs/AlAs)n superlattice.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	L. Bouzrara, R. Ajjel, H. Mejri, M. A. Zaïdi, S. Alaya, J. Mimila-Arroyo, Hichem Maaref	Excitonic recombination processes in GaAs grown by close-space vapour transport.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	Jorge M. García, Daniel Granados, Juan Pedro Silveira, Fernando Briones	In segregation effects during quantum dot and quantum ring formation on GaAs(001).	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	Onur Esame, Yasar Gurbuz, Ibrahim Tekin, Ayhan Bozkurt	Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP.	Microelectron. J.	2004	DBLP DOI BibTeX RDF
15	Y. L. Goh, Duu Sheng Ong	Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors.	Microelectron. Reliab.	2004	DBLP DOI BibTeX RDF
15	Jae-Seong Jeong, Jong-Shin Ha, Sang-Deuk Park	Field Failure Mechanism Investigation of GaAs based HBT Power Amplifier Mmodule (PAM).	Microelectron. Reliab.	2004	DBLP DOI BibTeX RDF
15	T. K. Chiang	A two-dimensional analytical subthreshold behavior model for short-channel AlGaAs/GaAs HFETs.	Microelectron. Reliab.	2004	DBLP DOI BibTeX RDF
15	Satbir S. Madra	Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP-Si/p-GaAs-C heterojunction bipolar transistor (HBT) devices.	Microelectron. Reliab.	2004	DBLP DOI BibTeX RDF
15	Francisco Torrens	Molecular polarizability of Si/Ge/GaAs semiconductors clusters.	J. Comput. Methods Sci. Eng.	2004	DBLP DOI BibTeX RDF
15	Saeid Nooshabadi, Juan A. Montiel-Nelson	Fast feedthrough logic: a high performance logic family for GaAs.	IEEE Trans. Circuits Syst. I Regul. Pap.	2004	DBLP DOI BibTeX RDF
15	Nethaji Dharmarasu, Pablo O. Vaccaro, Shanmugam Saravanan, Jose M. Zanardi Ocampo, Kazuyoshi Kubota, Nobuo Saito	High-density light-emitting diodes using a lateral p-n junction on patterned (311)A GaAs substrates.	IEICE Electron. Express	2004	DBLP DOI BibTeX RDF
15	Yiming Lou, Panagiotis D. Christofides	Feedback control of surface roughness of GaAs [001] thin films using kinetic Monte-Carlo models.	ACC	2004	DBLP DOI BibTeX RDF
15	Arvind Raghavan, Sunitha Venkataraman, Bhaskar Banerjee, Youngsuk Suh, Deukhyoun Heo, Joy Laskar	Direct extraction of an empirical temperature-dependent InGaP/GaAs HBT large-signal model.	IEEE J. Solid State Circuits	2003	DBLP DOI BibTeX RDF
15	Joon Hyung Kim, Ji Hoon Kim, Youn Sub Noh, Chul Soon Park	An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets.	IEEE J. Solid State Circuits	2003	DBLP DOI BibTeX RDF
15	Marco Masseroli, Pietro Cerveri, Pier Giuseppe Pelicci, Myriam Alcalay	GAAS: Gene Array Analyzer Software for management, analysis and visualization of gene expression data.	Bioinform.	2003	DBLP DOI BibTeX RDF
15	A. F. G. Monte, J. J. Finley, D. M. Whittaker, I. Itskevitch, D. J. Mowbray, M. S. Skolnick, F. V. de Sales, M. Hopkins	Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	Svetlana V. Koshevaya, Volodymyr Grimalsky, J. Escobedo-Alatorre, Margarita Tecpoyotl-Torres	Superheterodyne amplification of sub-millimeter electromagnetic waves in an n-GaAs film.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	Kanji Iizuka, K. Mori, T. Suzuki	Effects of growth interruption during the formation of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	L. Zamora-Peredo, A. Guillen-Cervantes, Z. Rivera-Alvarez, M. López-López, Ángel Rodríguez-Vázquez, Víctor-Hugo Méndez-García	Study of internal electric fields in AlGaAs/GaAs two-dimensional electron gas heterostructures.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	A. R. Kovsh, A. E. Zhukov, N. A. Maleev, S. S. Mikhrin, D. A. Livshits, Y. M. Shernyakov, M. V. Maximov, N. A. Pihtin, I. S. Tarasov, V. M. Ustinov	High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	B. Kaestner, Jörg Wunderlich, David G. Hasko, D. A. Williams	Quasi-lateral 2DEG-2DHG junction in AlGaAs/GaAs.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	Lotfi Beji, Laarbi Sfaxi, B. Ismaïl, S. Zghal, F. Hassen, Hichem Maaref	Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	Adalberto Balzarotti, M. Fanfoni, F. Patella, Fabrizio Arciprete, Ernesto Placidi	Electronic anisotropy of the GaAs(001) surface studied by energy loss spectroscopy.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	A. Bchetnia, Ahmed Rebey, B. El Jani, J. Cernogora, J.-L. Fave	New photoluminescence lines in Vanadium doped GaAs grown by MOVPE.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	H. C. Lee, K. W. Sun	Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wells.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	Maxim Ryzhii, V. Ryzhii, V. Mitin	Electric-field and space-charge distributions in InAs/GaAs quantum-dot infrared photodetectors: ensemble Monte Carlo particle modeling.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	J. Misiewicz, P. Sitarek, K. Ryczko, R. Kudrawiec, M. Fischer, M. Reinhardt, Alfred Forchel	Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	F. Patella, S. Nufris, Fabrizio Arciprete, M. Fanfoni, Ernesto Placidi, A. Sgarlata, Adalberto Balzarotti	Structural study of the InAs quantum-dot nucleation on GaAs(001).	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	T. E. Lamas, Sandro Martini, M. J. da Silva, A. A. Quivy, J. R. Leite	Morphological and optical properties of p-type GaAs(001) layers doped with silicon.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	Mohamed Henini	Self-assembled quantum dots on GaAs for optoelectronic applications.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	M. J. da Silva, Sandro Martini, T. E. Lamas, A. A. Quivy, E. C. F. da Silva, J. R. Leite	Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum.	Microelectron. J.	2003	DBLP DOI BibTeX RDF
15	Cezary Sydlo, Kabula Mutamba, L. Divac Krnic, Bastian Mottet, Hans L. Hartnagel	Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress.	Microelectron. Reliab.	2003	DBLP DOI BibTeX RDF
15	Z. Synowiec, B. Paszkiewicz	Electron transport in implant isolation GaAs layers.	Microelectron. Reliab.	2003	DBLP DOI BibTeX RDF
15	Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers	Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE.	Microelectron. Reliab.	2003	DBLP DOI BibTeX RDF
15	Nazar T. Ali, Joe Rodriguez-Tellez, Kahtan A. Mezher, Cesar Navarro, Antonio Tazón, Angel Mediavilla, T. Fernández	Dependency of IV characteristics of GaAs MESFET on optical illumination.	ICECS	2003	DBLP DOI BibTeX RDF
15	Ming-Chou Chiang, Shey-Shi Lu, Chin-Chun Meng, Shih-An Yu, Shih-Cheng Yang, Yi-Jen Chan	Analysis, design, and optimization of InGaP-GaAs HBT matched-impedance wide-band amplifiers with multiple feedback loops.	IEEE J. Solid State Circuits	2002	DBLP DOI BibTeX RDF
15	Marco Saraniti, Yibing Hu, Stephen Marshall Goodnick	Particle-based Full-band Approach for Fast Simulation of Charge Transport in Si, GaAs, and InP.	VLSI Design	2002	DBLP DOI BibTeX RDF
15	Jeffrey A. Mittereder, Jason A. Roussos, Wallace T. Anderson, Dimitrios E. Ioannou	Quantitative measurement of channel temperature of GaAs devices for reliable life-time prediction.	IEEE Trans. Reliab.	2002	DBLP DOI BibTeX RDF
15	Dionyz Pogany, Ján Kuzmík, J. Darmo, Martin Litzenberger, Sergey Bychikhin, Karl Unterrainer, Z. Mozolova, S. Hascik, Tibor Lalinsky, Erich Gornik	Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique.	Microelectron. Reliab.	2002	DBLP DOI BibTeX RDF
15	Philip M. Fabis	The processing technology and electronic packaging of CVD diamond: a case study for GaAs/CVD diamond plastic packages.	Microelectron. Reliab.	2002	DBLP DOI BibTeX RDF
15	Phil F. Marsh, Colin S. Whelan, William E. Hoke, Robert E. Leoni III, Thomas E. Kazior	Reliability of metamorphic HEMTs on GaAs substrates.	Microelectron. Reliab.	2002	DBLP DOI BibTeX RDF
15	William J. Roesch	Methods of reducing defects in GaAs ICs.	Microelectron. Reliab.	2002	DBLP DOI BibTeX RDF
15	Giovanna Sozzi, Roberto Menozzi	High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study.	Microelectron. Reliab.	2002	DBLP DOI BibTeX RDF
15	Gaudenzio Meneghesso, A. Cocco, Giovanna Mura, Simona Podda, Massimo Vanzi	Backside Failure Analysis of GaAs ICs after ESD tests.	Microelectron. Reliab.	2002	DBLP DOI BibTeX RDF