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Found 1 publication records. Showing 1 according to the selection in the facets
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Authors |
Title |
Venue |
Year |
Link |
Author keywords |
69 | G. Hari Rama Krishna, Amit K. Aditya, Nirmal B. Chakrabarti, Swapna Banerjee |
Analysis of temperature dependence of Si-Ge HBT. ![Search on Bibsonomy](Pics/bibsonomy.png) |
VLSI Design ![In: 8th International Conference on VLSI Design (VLSI Design 1995), 4-7 January 1995, New Delhi, India, pp. 268-271, 1995, IEEE Computer Society, 0-8186-6905-5. The full citation details ...](Pics/full.jpeg) |
1995 |
DBLP DOI BibTeX RDF |
semiconductor materials, heterojunction bipolar transistors, Ge-Si alloys, heterojunction bipolar transistors, Ge mole-fraction, two dimensional device simulator, BISOF, current gain, graded HBT, 200 to 300 K, simulation, finite element method, finite element analysis, FEM, temperature dependence, SiGe, thermal analysis, semiconductor device models |
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