Search results for "drc"

Hits ?▲	Authors	Title	Venue	Year	Link
43	Niharika Thakuria, Atanu K. Saha, Sandeep Krishna Thirumala, Daniel Schulman, Saptarshi Das, Sumeet Kumar Gupta	Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications.	DRC	2020	DBLP DOI BibTeX RDF
43	Mehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli	Modeling and Optimization of Advanced 3D NAND Memory.	DRC	2020	DBLP DOI BibTeX RDF
43	Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl	The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications.	DRC	2020	DBLP DOI BibTeX RDF
43	Yutaro Yamaguchi 0002, Keigo Nakatani, Koon Hoo Teo, Shintaro Shinjo	Millimeter-Wave GaN Device Modeling for Power Amplifiers.	DRC	2020	DBLP DOI BibTeX RDF
43	Jun Tao, Debarghya Sarkar, Sizhe Weng, Hyun Uk Chae, Ragib Ahsan, Rehan Kapadia	A Platform for Monolithic Back End of Line III-V Integration.	DRC	2020	DBLP DOI BibTeX RDF
43	Jinyoung Park, Dacheng Mao, Yaowei Xie, Zheshun Xiong, Guangyu Xu	High-Density Multilayer Graphene Microelectrode Arrays for Optogenetic Electrophysiology in Human Embryonic Kidney Cells.	DRC	2020	DBLP DOI BibTeX RDF
43	Sebastian Lukas, Satender Kataria, Maximilian Prechtl, Oliver Hartwig, Alexander Meledin, Joachim Mayer, Daniel Neumaier, Georg S. Duesberg, Max C. Lemme	Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices.	DRC	2020	DBLP DOI BibTeX RDF
43	Devansh Saraswat, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing	Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts.	DRC	2020	DBLP DOI BibTeX RDF
43		Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019	DRC	2019	DBLP BibTeX RDF
43	Supriyo Datta	p-Bits for Probabilistic Computing.	DRC	2019	DBLP DOI BibTeX RDF
43	Yoni Mehlman, Can Wu, Sigurd Wagner, Naveen Verma, James C. Sturm	Gigahertz Zinc-Oxide TFT-Based Oscillators.	DRC	2019	DBLP DOI BibTeX RDF
43	Changyeong Jeong, Yongbum Park, L. Jay Guo	Flexible organic light-emitting diodes with efficiency improvement by dielectric-metal-dielectric anode.	DRC	2019	DBLP DOI BibTeX RDF
43	Vivek Saraswat, Sandip Lashkare, Pankaj Kumbhare, Udayan Ganguly	Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise.	DRC	2019	DBLP DOI BibTeX RDF
43	Debarghya Sarkar, Sizhe Weng, Yunpeng Xu, Frank Greer, Rehan Kapadia	Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide.	DRC	2019	DBLP DOI BibTeX RDF
43	Yury Turkulets, Ilan Shalish	Surface states in AlGaN/GaN high electron mobility transistors: Energy profiling using channel photocurrent spectroscopy.	DRC	2019	DBLP DOI BibTeX RDF
43	Omor Shoron, Timo Schumann, Manik Goyal, David Kealhofer, Susanne Stemmer	Demonstration of FETs with 3D Dirac Semimetal, Cd3As2.	DRC	2019	DBLP DOI BibTeX RDF
43	Zheng Wang, Hanbin Ying, Nujhat Tasneem, Anthony Gaskell, John D. Cressler, Martin Mourigal, Asif Islam Khan	Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mK.	DRC	2019	DBLP DOI BibTeX RDF
43	Alwin Daus, Sam Vaziri, Kevin Brenner, Ryan W. Grady, Alvin U. Tang, Eric Pop	Flexible Top-Gated Monolayer MoS2 Transistors with High Mobility.	DRC	2019	DBLP DOI BibTeX RDF
43	Jorge Gomez 0005, Sourav Dutta, Kai Ni 0004, Benjamin Grisafe, Jeffrey Smith 0003, Asif Khan, Suman Datta	Significance of Multi and Few Domain Ferroelectric Switching Dynamics for Steep-Slope Non-Hysteretic Ferroelectric Field Effect Transistor.	DRC	2019	DBLP DOI BibTeX RDF
43	Ruiping Zhou, Jörg Appenzeller	About the interplay between contact and channel resistance in MoS2 and its impact on mobility extraction.	DRC	2019	DBLP DOI BibTeX RDF
43	Tyler A. Growden, D. F. Storm, E. M. Cornuelle, L. M. Whitaker, Brian P. Downey, W.-D. Zhang, J. W. Daulton, R. Molnar, E. R. Brown, Paul R. Berger, David J. Meyer	Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes.	DRC	2019	DBLP DOI BibTeX RDF
43	Punyashloka Debashis, Pramey Upadhyaya, Zhihong Chen	Electrical Annealing and Stochastic Resonance in Low Barrier Perpendicular Nanomagnets for Oscillatory Neural Networks.	DRC	2019	DBLP DOI BibTeX RDF
43	Chunlei Wu, Nikhita Shaju, Hansheng Ye, Benjamin Grisafe, Suman Datta, Patrick Fay	Polarization Recovery Behavior of Hf0.5Zr0.5O2 on Gallium Nitride HEMT Heterostructures.	DRC	2019	DBLP DOI BibTeX RDF
43	Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin, Helena Silva, Ali Gokirmak	Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk.	DRC	2019	DBLP DOI BibTeX RDF
43	Manuel Le Gallo, Abu Sebastian, Evangelos Eleftheriou	Phase-change memory enables energy-efficient brain-inspired computing.	DRC	2019	DBLP DOI BibTeX RDF
43	Marcin Siekacz, Grzegorz Muziol, Henryk Turski, Krzesimir Nowakowski-Szkudlarek, Mateusz Hajdel, Mikolaj Zak, Anna Feduniewicz-Zmuda, Pawel Wolny, M. Mikosza, Marta Sawicka, Czeslaw Skierbiszewski	Tunnel junctions for vertically integrated multiple nitrides laser diodes.	DRC	2019	DBLP DOI BibTeX RDF
43	Kevin Lee, Shyam Bharadwaj, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena	Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes.	DRC	2019	DBLP DOI BibTeX RDF
43	Michael Hoffmann 0008, Stefan Slesazeck, Thomas Mikolajick	Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation.	DRC	2019	DBLP DOI BibTeX RDF
43	Sheikh Z. Ahmed, Yaohua Tan, Avik W. Ghosh	Role of transverse effective mass in Auger generation impacted planar III-V Tunnel FETs.	DRC	2019	DBLP DOI BibTeX RDF
43	Thomas Mikolajick, Halid Mulaosmanovic, Michael Hoffmann 0008, Benjamin Max, Terence Mittmann, Uwe Schroeder, Stefan Slesazeck	Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories.	DRC	2019	DBLP DOI BibTeX RDF
43	José A. Bahamonde, Harish Krishnaswamy, Ioannis Kymissis	A Tunable Surface Acoustic Wave Device on Zinc Oxide via acoustoelectric interaction with AIGaN/GaN 2DEG.	DRC	2019	DBLP DOI BibTeX RDF
43	Wei D. Lu	2D materials in resistive memory and neuromorphic computing system applications.	DRC	2019	DBLP DOI BibTeX RDF
43	Hojoon Ryu, Haonan Wu, Fubo Rao, Wenjuan Zhu	Ferroelectric Tunneling Junctions for Neurosynaptic Computing.	DRC	2019	DBLP DOI BibTeX RDF
43	Zhanbo Xia, Caivu Wang, Hareesh Chandrasekar, Wyatt Moore, Aidan Lee, Nidhin Kurian Kalarickal, Fengyuan Yang, Siddharth Rajan	Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown Field.	DRC	2019	DBLP DOI BibTeX RDF
43	Durjoy Dev, Adithi Krishnaprasad, Zhezhi He, Sonali Das, Mashiyat Sumaiya Shawkat, Madison Manley, Olaleye Aina, Deliang Fan, Yeonwoong Jung, Tania Roy	Artificial Neuron using Ag/2D-MoS2/Au Threshold Switching Memristor.	DRC	2019	DBLP DOI BibTeX RDF
43	Yuezhang Zou, Darshil K. Gala, James A. Bain	Impact Ionization Model for S-NDR based Threshold Switching Devices.	DRC	2019	DBLP DOI BibTeX RDF
43	Sayantan Ghosh, Sushovan Dhara, Abin Varghese, Kartikey Thakar, Saurabh Lodha	Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunction.	DRC	2019	DBLP DOI BibTeX RDF
43	Roop K. Mech, Neha Mohta, Rangarajan Muralidharan, Digbijov N. Nath	Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer $\alpha$ -In2Se3.	DRC	2019	DBLP DOI BibTeX RDF
43	Paolo Paletti, Mina Asghari Heidarlou, Karla González-Serrano, Cristobal Alessandri, Alan C. Seabaugh	Steep Subthreshold Swing Originating from Gate Delay.	DRC	2019	DBLP DOI BibTeX RDF
43	Abdullah Ash-Saki, Mahabubul Alam, Swaroop Ghosh	True Random Number Generator using Superconducting Qubits.	DRC	2019	DBLP DOI BibTeX RDF
43	Zhihui Cheng, Hattan Abuzaid, Yifei Yu, Shreya Singh, Linyou Cao, Aaron D. Franklin	New Observations in Contact Scaling for 2D FETs.	DRC	2019	DBLP DOI BibTeX RDF
43	Zhiwu Zheng, Levent E. Aygun, Yoni Mehlman, Sigurd Wagner, Naveen Verma, James C. Sturm	Analyzing and Increasing Yield of ZnO Thin-Film Transistors for Large-area Sensing Systems by Preventing Process-Induced Gate Dielectric Breakdown.	DRC	2019	DBLP DOI BibTeX RDF
43	Asif Islam Khan	Ferroelectrics, Negative Capacitance and Depolarization Field: What exactly is negative capacitance?	DRC	2019	DBLP DOI BibTeX RDF
43	Wenshen Li, Kazuki Nornoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing	Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes.	DRC	2019	DBLP DOI BibTeX RDF
43	Brandon Isaac, Yuan Liu, Sergio Pinna, Larry Coldren, Jonathan Klamkin	Waveguide Uni-Traveling-Carrier Photodiodes for mmW Signal Generation: Space-Charge Impedance and Efficiency Limitations.	DRC	2019	DBLP DOI BibTeX RDF
43	Chandan Joishi, Zhanbo Xia, Shahadat Hasan Sohel, Saurabh Lodha, Siddharth Rajan	Epitaxial passivation of delta doped $\beta$ -Ga2O3 field effect transistors.	DRC	2019	DBLP DOI BibTeX RDF
43	Connor McClellan, Andrew C. Yu, Ching-Hua Wang, H.-S. Philip Wong, Eric Pop	Vertical Sidewall MoS2 Growth and Transistors.	DRC	2019	DBLP DOI BibTeX RDF
43	Daniel Feezell, Arman Rashidi, Morteza Monavarian, Andrew Aragon, Mohsen Nami, Saadat Mishkat-Ul-Masabih, Ashwin Rishinaramangalam	III-Nitride High-Speed Optoelectronics.	DRC	2019	DBLP DOI BibTeX RDF
43	Andrew D. Carter, Miguel E. Urteaga, Petra Rowell, Joshua Bergman, Andrea Arias	Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact.	DRC	2019	DBLP DOI BibTeX RDF
43	Jie Zhang, Guangyang Lin, Peng Cui, Yuping Zeng	High-performance ultrathin body TiO2 TFTs with record on/off current ratio and subthreshold swinz.	DRC	2019	DBLP DOI BibTeX RDF
43	Hongwei Zhao, Sergio Pinna, Fengqiao Sang, Simone Tommaso Suran Brunelli, Larry A. Coldren, Jonathan Klamkin	High Power Indium Phosphide Photonic Integrated Circuit Platform.	DRC	2019	DBLP DOI BibTeX RDF
43	Terry Y. T. Hung, Chin-Sheng Pang, Xiangkai Liu, Dmitry Zemlyanov, Zhihong Chen	Atomically Thin p-doping Layer and Record High Hole Current on WSe2.	DRC	2019	DBLP DOI BibTeX RDF
43	U. Rana, D. P. Brunco, S. Raman, Dina H. Triyoso, M. W. Stoker, J. B. Johnson, Luigi Pantisano, K. D. Seo, M. Zhao, A. Reznicek, R. Krishnan, B. Moser, J. Freeman, L. Jang, Evgeny Kaganer	High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs.	DRC	2019	DBLP DOI BibTeX RDF
43	Karl-Magnus Persson, Mamidala Saketh Ram, Mattias Borg, Lars-Erik Wernersson	Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM.	DRC	2019	DBLP DOI BibTeX RDF
43	Simran Shahi, Maomao Liu, Hemendra Nath Jaiswal, Licheng Xiao, Sichen Wei, Hyun Kim, Seok Joon Yun, Young Hee Lee, Fei Yao, Huamin Li	Field Effect and Raman Characterization of Self-Assembled Mos2 Nanoscrolls.	DRC	2019	DBLP DOI BibTeX RDF
43	Sang H. Yoo, Enrique D. Gomez, Thomas N. Jackson	High Mobility and Drive Current ZnO Thin Film Transistors.	DRC	2019	DBLP DOI BibTeX RDF
43	Max C. Lemme	Efficient Optoelectronics with 2D Materials.	DRC	2019	DBLP DOI BibTeX RDF
43	Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken	Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices.	DRC	2019	DBLP DOI BibTeX RDF
43	Shun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh	Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization.	DRC	2019	DBLP DOI BibTeX RDF
43	Hao Xue, Choong Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu	RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts.	DRC	2019	DBLP DOI BibTeX RDF
43	Yashwanth Balaji, Quentin Smets, Dennis Lin, I. Asselberghs, Iuliana P. Radu, Guido Groeseneken	Tunnel FETs using Phosphorene/ReS2 heterostructures.	DRC	2019	DBLP DOI BibTeX RDF
43	Yong-Bum Park, Changyeong Jeong, L. Jay Guo	Ultrathin Metal Film Transparent Conductor for Efficient Light Coupling in Organic Light Emitting Diode.	DRC	2019	DBLP DOI BibTeX RDF
43	Mohammad T. Sharbati, Se Youn Cho, Golnaz Najaf Tomaraei, Qingzhou Wan, Joshua Schlea, Mostafa Bedewy, Feng Xiong	Sheet-rich Silk-base RRAM with Low Switching Voltages and Improved Reliabilities.	DRC	2019	DBLP DOI BibTeX RDF
43	Felix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann 0008, Thomas Mikolajick, Johann W. Bartha	Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors.	DRC	2019	DBLP DOI BibTeX RDF
43	Xiang Li, Mingda Li, Alyosha C. Molnar, Debdeep Jena, Huili Grace Xing	A Single-Device Embodiment of XNOR Logic: TransiXNOR.	DRC	2019	DBLP DOI BibTeX RDF
43	Man Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki	Enhancement-Mode Current Aperture Vertical Ga2O3 MOSFETs.	DRC	2019	DBLP DOI BibTeX RDF
43	Sushovan Dhara, Kartikey Thakar, Savantan Ghosh, Abin Varghese, Suddhasatta Mahapatra, Saurabh Lodha	Comparative Evaluation of vdW Materials Based PN Junction and FET for Gas Sensing.	DRC	2019	DBLP DOI BibTeX RDF
43	Kei May Lau	III-V Lasers and Integrated Components Directly Grown on Silicon: Options for Integration.	DRC	2019	DBLP DOI BibTeX RDF
43	Hsin-Ying Tseng, Yihao Fang, Shibo Zhong, Mark J. W. Rodwell	InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing.	DRC	2019	DBLP DOI BibTeX RDF
43	Jaeyi Chun, Srabanti Chowdhury	Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width.	DRC	2019	DBLP DOI BibTeX RDF
43	Aditi Agarwal, Kijeong Han, B. Jayant Baliga	Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs.	DRC	2019	DBLP DOI BibTeX RDF
43	Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing	Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2.	DRC	2019	DBLP DOI BibTeX RDF
43	Parijat Sengupta, Shaloo Rakheja	Spin-valley coupled caloritronics with strained honeycomb lattices.	DRC	2019	DBLP DOI BibTeX RDF
43	Jian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers 0001, Baile Chen	Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate.	DRC	2019	DBLP DOI BibTeX RDF
43	Sushant Mittal, Ashish Pal, Mehdi Saremi, J. Ferrell, M. Haverty, T. Miyashita, N. Kim, El Mehdi Bazizi, Blessy Alexander, A. B. Sachid, Buvna Ayyagari	Highly-Doped Through-Contact Silicon Epi Design at 3 nm node.	DRC	2019	DBLP DOI BibTeX RDF
43	Qingzhou Wan, Peng Zhang, Qiming Shao, Mohammad T. Sharbati, John R. Erickson, Kang L. Wang, Feng Xiong	Dynamic $(\mathrm{Bi}_{\mathrm{x}}\mathrm{Sb}_{1-\mathrm{x}})_{2}\mathrm{Te}_{\mathrm{3}}$ Synaptic Devices with Programmable Spatio-Temporal Responses.	DRC	2019	DBLP DOI BibTeX RDF
43	Girish Rughoobur, Lay Jain, Akintunde Ibitayo Akinwande	Towards Vacuum-Less Operation of Nanoscale Vacuum Channel Transistors.	DRC	2019	DBLP DOI BibTeX RDF
43	Mengwei Si, Xiao Lyu, Peide D. Ye	Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack.	DRC	2019	DBLP DOI BibTeX RDF
43	Yuelin Wu, Cristian Herrera, Aaron Hardy, Matthias Muehle, Tom Zimmermann 0002, Timothy A. Grotjohn	Diamond Metal-Semiconductor Field Effect Transistor for High Temperature Applications.	DRC	2019	DBLP DOI BibTeX RDF
43	Shivam Sharma, Ke Zeng, Abhishek Vaidya, Uttam Singisetti	Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown $\beta$-Ga2O3.	DRC	2019	DBLP DOI BibTeX RDF
43	Henryk Turski, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Shyam Bharadwaj, Mikolaj Chlipala, Krzesimir Nowakowski-Szkudlarek, Mateusz Hajdel, Huili Grace Xing, Debdeep Jena, Czeslaw Skierbiszewski	Buried tunnel junction for p-down nitride laser diodes.	DRC	2019	DBLP DOI BibTeX RDF
43	Yihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell	$W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity.	DRC	2019	DBLP DOI BibTeX RDF
43	Pratyush Pandey, Cristobal Alessandri, Alan C. Seabaugh	Process Dependent Switching Dynamics of Ferroelectric Hafnium Zirconate.	DRC	2019	DBLP DOI BibTeX RDF
43	Isaac Ruiz, Thomas E. Beechem, Gyorgy Vizkelethy, Paul M. Thelen, Joshua Shank, Stephen W. Howell, Michael D. Goldflam	Depleted Graphene-Oxide-Semiconductor Junctions for High Energy Radiation Detection.	DRC	2019	DBLP DOI BibTeX RDF
43	Stephanie M. Bohaichuk, Mario M. Pelella, Yifei Sun, Zhen Zhang, Shriram Ramanathan, Eric Pop	A Novel ESD Clamp Based on the VO2 Insulator-Metal Transition.	DRC	2019	DBLP DOI BibTeX RDF
43	Kyle J. Liddy, Nolan S. Hendricks, Andrew J. Green, Andreas Popp, Miles T. Lindquist, Kevin D. Leedy, Stephen E. Tetlak, Neil A. Moser, Günter Wagner, Kelson D. Chabak, Gregg H. Jessen	Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs.	DRC	2019	DBLP DOI BibTeX RDF
43	Wriddhi Chakraborty, Kai Ni 0004, Sourav Dutta, Benjamin Grisafe, Jeffrey Smith 0003, Suman Datta	Cryogenic Response of HKMG MOSFETs for Quantum Computing Systems.	DRC	2019	DBLP DOI BibTeX RDF
43	Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang 0209, Daniele Ielmini	In-memory solution of linear systems with crosspoint arrays without iterations.	DRC	2019	DBLP DOI BibTeX RDF
43	Jacob N. Rohan, Pingping Zhuang, S. S. Teja Nibhanupudi, Sanjay K. Banerjee, Jaydeep P. Kulkarni	Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devices.	DRC	2019	DBLP DOI BibTeX RDF
43	Mohammad Khairul Bashar, Richard Hrdy, Antik Mallick, Farzad Farnoud Hassanzadeh, Nikhil Shukla	Solving the Maximum Independent Set Problem using Coupled Relaxation Oscillators.	DRC	2019	DBLP DOI BibTeX RDF
43	Shalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra	Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction.	DRC	2019	DBLP DOI BibTeX RDF
43	P. Fakhimi, W.-D. Zhang, Tyler A. Growden, E. R. Brown, R. Droopad, K. M. Hansen, Paul R. Berger	New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs.	DRC	2019	DBLP DOI BibTeX RDF
43	Kartikey Thakar, Saurabh Lodha	Photo-amplification in Bipolar $\mathbf{WSe}_{2}$ Transistors with Electrostatic Gating.	DRC	2019	DBLP DOI BibTeX RDF
43	Sang Woo Han, Jianan Song, Rongming Chu	Characteristics of P-channel GaN MOSFET up to 300 °C.	DRC	2019	DBLP DOI BibTeX RDF
43	Tetsu Kachi, Tetsuo Narita, Hideki Sakurai, Jun Suda	Process Technologies for GaN High Voltage Devices.	DRC	2019	DBLP DOI BibTeX RDF
43	Hefei Liu, Xiaodong Yan, Huan Zhao, Han Wang	Emerging Low Dimensional Material Devices for Beyond von-Neumann Computing.	DRC	2019	DBLP DOI BibTeX RDF
43	Evan M. Anderson, Leon Maurer, Lisa A. Tracy, S. W. Smith, Ping Lu, Aaron M. Katzenmeyer, Andrew D. Baczewski, DeAnna M. Campbell, Michael T. Marshall, Dan R. Ward, Tzu-Ming Lu, Shashank Misra	Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectric.	DRC	2019	DBLP DOI BibTeX RDF
43	Yongjie Cui, Yu Cao, Manyam Pilla, Edward Beam, Andy Xie, Cathy Lee, Andrew Ketterson, Michael Roach 0003, Anton Geiler, Michael Geiler, Lee Burns, Douglas Linkhart	Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF application.	DRC	2019	DBLP DOI BibTeX RDF
43	Ankur Nipane, Punnu Jose Sebastian, Younghun Jung, Min Sup Choi, Abhinandan Borah, Won Jong Yoo, James C. Hone, James T. Teherani	Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETs.	DRC	2019	DBLP DOI BibTeX RDF
43	Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer	High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper).	DRC	2019	DBLP DOI BibTeX RDF