Search results for "GaAs"

Hits ?▲	Authors	Title	Venue	Year	Link
15	Tony Chopard, Vivien Lacour, Thérèse Leblois	GaAs Coupled Micro Resonators with Enhanced Sensitive Mass Detection.	Sensors	2014	DBLP DOI BibTeX RDF
15	Mahamat Issa Hassan, Rami Bahsoon	Green-as-a-service (GaaS) for cloud service provision operation.	SAC	2014	DBLP DOI BibTeX RDF
15	Abdelkader Aissat, Lynda Chenini, Sofiane Ammi	Theoretical analysis of temperature dependence of material parameters in GaAsSbN/GaAs intersubband quantum wells.	ICMCS	2014	DBLP DOI BibTeX RDF
15	Rachid Malek, Khalil Kassmi	Monte Carlo simulations of thin semiconductor films deposition. Case of InAs/GaAs.	ICMCS	2014	DBLP DOI BibTeX RDF
15	G. Rafael-Valdivia, Zhiguo Su, Anthony Urquizo, Thalia Mendoza	Modeling the frequency dispersion phenomena in GaN and GaAs devices for broadband data communication.	LATINCOM	2014	DBLP DOI BibTeX RDF
15	Ayesha Shaukat, Naz E. Islam	Comparative Study of Ballistic Transport in Si and GaAs Using Non Equilibrium Green's Function Formalism.	FIT	2014	DBLP DOI BibTeX RDF
15	Oguzhan Kizilbey, Osman Palamutçuogullari	A comparison of GaN, Si and GaAs power amplifiers.	SIU	2014	DBLP DOI BibTeX RDF
15	Enrique Comesaña, Manuel Aldegunde, Antonio J. García-Loureiro	Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO.	Comput. Phys. Commun.	2013	DBLP DOI BibTeX RDF
15	Kiyoyuki Ihara	A 250 MHz to 8 GHz GaAs pHEMT IQ Modulator.	IEICE Trans. Electron.	2013	DBLP DOI BibTeX RDF
15	Shweta Tripathi, Satyabrata Jit	Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions.	IET Circuits Devices Syst.	2013	DBLP DOI BibTeX RDF
15	Stephane Blin, Lucie Tohme, Dominique Coquillat, Shogo Horiguchi, Yusuke Minamikata, Shintaro Hisatake, Philippe Nouvel, Thomas Cohen, Annick Penarier, Fabrice Cano, Luca Varani, Wojciech Knap, Tadao Nagatsuma	Wireless communication at 310 GHz using GaAs high-electron-mobility transistors for detection.	J. Commun. Networks	2013	DBLP DOI BibTeX RDF
15	Yuxia Shi, Yan Wang	An enhanced model for InGaP/GaAs heterojunction bipolar transistor.	Microelectron. J.	2013	DBLP DOI BibTeX RDF
15	Fan-Hsiu Huang, Yue-Ming Hsin	A low-power differential injection-locked frequency divider with output power flatness in 0.5 μm E/D-mode GaAs PHEMT.	Microelectron. J.	2013	DBLP DOI BibTeX RDF
15	Qiang Cui, Shuyun Zhang, Juin J. Liou	Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology.	Microelectron. Reliab.	2013	DBLP DOI BibTeX RDF
15	Alain Bensoussan, Ronan Marec, Jean Luc Muraro, L. Portal, Philippe Calvel, Catherine Barillot, Marie Genevieve Perichaud, Laurent Marchand, Gael Vignon	GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing.	Microelectron. Reliab.	2013	DBLP DOI BibTeX RDF
15	Mauro A. Bettiati	High optical strength GaAs-based laser structures.	Microelectron. Reliab.	2013	DBLP DOI BibTeX RDF
15	Andre G. Metzger, Vincenzo d'Alessandro, Niccolò Rinaldi, Peter J. Zampardi	Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers.	Microelectron. Reliab.	2013	DBLP DOI BibTeX RDF
15	W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet	Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques.	Microelectron. Reliab.	2013	DBLP DOI BibTeX RDF
15	Yiming Li 0005	Computer simulation of electron energy state spin-splitting in nanoscale InAs/GaAs semiconductor quantum rings.	Math. Comput. Model.	2013	DBLP DOI BibTeX RDF
15	Hoon Ryu, Dukyun Nam, Bu-Young Ahn, Jong-Suk Ruth Lee, Kumwon Cho, Sunhee Lee, Gerhard Klimeck, Mincheol Shin	Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors.	Math. Comput. Model.	2013	DBLP DOI BibTeX RDF
15	Marc Currie, Pouya Dianat, Anna Persano, Maria Concetta Martucci, Fabio Quaranta, Adriano Cola, Bahram Nabet	Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer.	Sensors	2013	DBLP DOI BibTeX RDF
15	Tao Chen, Xiaohong Sun, Jianhui Wu, Xu Niu, Huai Gao	A 2.4GHz GaAs HBT stacked power amplifier with inductance compensation.	IEICE Electron. Express	2013	DBLP DOI BibTeX RDF
15	Shanwen Hu, Huai Gao, Longxing Shi, G. P. Li	A novel DC-12GHz variable gain amplifier in InGaP/GaAs HBT technology.	IEICE Electron. Express	2013	DBLP DOI BibTeX RDF
15	Hamhee Jeon, Nam-Young Kim	A compact quadrature coupler on GaAs IPD process for LTE applications.	IEICE Electron. Express	2013	DBLP DOI BibTeX RDF
15	Edson Garduño-Nolasco, Mohamed Missous	Silicon Nitride anti-reflective coating for intermediate band InAs/GaAs PV devices.	CCE	2013	DBLP DOI BibTeX RDF
15	Ayman Rizk, Kazi Islam 0001, Ammar Nayfeh	Modeling of InAs/GaAs Quantum Dot Solar Cells.	EMS	2013	DBLP DOI BibTeX RDF
15	Jeong-Seok Jang, Kyounghak Lee	Implementation of INGaP/GaAs HBT MMIC PA with Gain-Expansion Drive-Amplifier and Doherty Structure.	ICISA	2013	DBLP DOI BibTeX RDF
15	Leontios Stampoulidis, Matthew F. O'Keefe, Elias G. Giacoumidis, Robert G. Walker, Yi Zhou, Nigel Cameron, Efstratios Kehayas, Ioannis Tomkos, Lars Zimmermann	Fabrication of the first high-speed GaAs IQ electro-optic modulator arrays and applicability study for low-cost Tb/s direct-detection optical OFDM networks.	OFC/NFOEC	2013	DBLP BibTeX RDF
15	Dietmar Korn, Philipp C. Schindler, Christos Stamatiadis, Matthew O'Keefe, Leontios Stampoulidis, René Schmogrow, Panagiotis Zakynthinos, Robert Palmer, Nigel Cameron, Yi Zhou, Robert G. Walker, Efstratios Kehayas, Ioannis Tomkos, Lars Zimmermann, Klaus Petermann, Wolfgang Freude, Christian Koos, Juerg Leuthold	First monolithic GaAs IQ electro-optic modulator, demonstrated at 150 Gbit/s with 64-QAM.	OFC/NFOEC	2013	DBLP BibTeX RDF
15	Tao Zhou, Xiaodong Lu, Shuxian Lun, Yuan Li, Ming Zhang, Chunxi Lu	Design of GaAs solar cell front surface anti-reflection coating.	ICVES	2013	DBLP DOI BibTeX RDF
15	Ryan S. Dowdy	Planar GaAs nanowire arrays for nanoelectronics: controlled growth, doping, characterization, and devices		2013	RDF
15	Ha Trong Than, George W. Sun, Geovanni S. Cuellar, Jiyang Zeng, Nate T. Schultz, Michael E. Moya, Younkyu Chung, Blythe C. Deckman, Michael P. DeLisio	Design and Performance of a 600-WC-Band Amplifier Using Spatially Combined GaAs FETs for Satellite Communications.	IEEE J. Solid State Circuits	2012	DBLP DOI BibTeX RDF
15	Parrish Ralston, Marcus Oliver, Krishna Vummidi, Sanjay Raman	Liquid-Metal Vertical Interconnects for Flip Chip Assembly of GaAs C-Band Power Amplifiers Onto Micro-Rectangular Coaxial Transmission Lines.	IEEE J. Solid State Circuits	2012	DBLP DOI BibTeX RDF
15	Neda Kazemy Najafabadi, Sare Nemati, Massoud Dousti	Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology.	J. Zhejiang Univ. Sci. C	2012	DBLP DOI BibTeX RDF
15	Anna Persano, Augusto Tazzoli, Paola Farinelli, Gaudenzio Meneghesso, Pietro Siciliano, Fabio Quaranta	K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
15	Chao-Hung Chen, Hsien-Chin Chiu, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien	Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
15	Murat Soylu, Fahrettin Yakuphanoglu, I. S. Yahia	Fabrication and electrical characteristics of Perylene-3, 4, 9, 10-tetracarboxylic dianhydride/p-GaAs diode structure.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
15	R. K. Mamedov, M. A. Yeganeh	Current transport and formation of energy structures in narrow Au/n-GaAs Schottky diodes.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
15	Jincan Zhang, Yuming Zhang, HongLiang Lv, Yimen Zhang, Shi Yang	The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
15	P. S. Das, Abhijit Biswas	Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
15	Hsien-Chin Chiu, Che-Kai Lin, Chao-Wei Lin, Chao-Sung Lai	Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
15	Hajime Sasaki, Takayuki Hisaka, Kaoru Kadoiwa, Yoshikazu Terai, Yasufumi Fujiwara	Characteristics of SiN/GaAs interface under exposure to high-temperature and high-humidity conditions measured by photoreflectance spectroscopy.	IEICE Electron. Express	2012	DBLP DOI BibTeX RDF
15	Hsuan-Ling Kao, S. P. Shih, Chih-Sheng Yeh, Li-Chun Chang	A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology.	DDECS	2012	DBLP DOI BibTeX RDF
15	Kazi Islam 0001, Ammar Nayfeh	Simulation of a-Si/c-GaAs/c-Si Heterojunction Solar Cells.	EMS	2012	DBLP DOI BibTeX RDF
15	Aleksey Dyskin, Dan Ritter, Ingmar Kallfass	Ultra wideband cascaded low noise amplifier implemented in 100-nm GaAs metamorphic-HEMT technology.	ISSSE	2012	DBLP DOI BibTeX RDF
15	Giovanni Battista Barone, Roberto Bifulco, Vania Boccia, Davide Bottalico, Roberto Canonico, Luisa Carracciuolo	GaaS: Customized Grids in the Clouds.	Euro-Par Workshops	2012	DBLP DOI BibTeX RDF
15	Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot	Investigation on the optical gain and threshold current density of Ga1-xInxAs1-y-zNySbz /GaAs strained quantum wells laser.	ICMCS	2012	DBLP DOI BibTeX RDF
15	Christina Moreno, Nicolas Tizon, Marius Preda	Mobile Cloud Convergence in GaaS: A Business Model Proposition.	HICSS	2012	DBLP DOI BibTeX RDF
15	Yongsheng Dai, Ping Li, Qiuyue Xie, Qunfei Han, Honghao Yin, Shuyuan Shi, Ming Luo	6∼18 GHz GaAs PHEMT 6-bit MMIC digital phase shifter.	ISCIT	2012	DBLP DOI BibTeX RDF
15	David Berthiaume, Nicolas G. Constantin	A modified current mirror circuit for the biasing of GAAS biFET RFIC power amplifiers.	CCECE	2012	DBLP DOI BibTeX RDF
15	Ming-Wei Wu, Chien-Pai Wu, Yen-Chung Chiang	A V-band power amplifier with 11.6dB gain and 7.8% PAE in GaAs 0.15µm pHEMT process technology.	APCCAS	2012	DBLP DOI BibTeX RDF
15	Yong Ding 0003, Xiao-hua Luo, Xiaolang Yan	Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias.	J. Zhejiang Univ. Sci. C	2011	DBLP DOI BibTeX RDF
15	Xiao-Ying Wang, Wen-ting Guo, Yang-yang Peng, Wen-quan Sui	GaAs pHEMT multi-band/multi-mode SP9T switch for quad-band GSM and UMTS handsets applications.	J. Zhejiang Univ. Sci. C	2011	DBLP DOI BibTeX RDF
15	Shintaro Shinjo, Kazutomi Mori, Tomokazu Ogomi, Yoshihiro Tsukahara, Mitsuhiro Shimozawa	On-Chip Temperature Compensation Active Bias Circuit Having Tunable Temperature Slope for GaAs FET MMIC PA.	IEICE Trans. Electron.	2011	DBLP DOI BibTeX RDF
15	Wen-Xin Tang, Changxi Zheng, Zhenyu Zhou, David E. Jesson, Jerry Tersoff	Ga droplet surface dynamics during Langmuir evaporation of GaAs.	IBM J. Res. Dev.	2011	DBLP DOI BibTeX RDF
15	Ákos Nemcsics, Lajos Tóth, Laszlo Dobos, Andrea Stemmann	Facetting of the self-assembled droplet epitaxial GaAs quantum dot.	Microelectron. Reliab.	2011	DBLP DOI BibTeX RDF
15	Saleh Tahamtan, A. Goodarzi, S. P. Abbasi, A. Hodaei, M. S. Zabihi, J. Sabbaghzadeh	Investigation on the effect of annealing process parameters on AuGeNi ohmic contact to n-GaAs using microstructural characteristics.	Microelectron. Reliab.	2011	DBLP DOI BibTeX RDF
15	Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso	ESD sensitivity of a GaAs MMIC microwave power amplifier.	Microelectron. Reliab.	2011	DBLP DOI BibTeX RDF
15	Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou	Thermal reliability of VCO using InGaP/GaAs HBTs.	Microelectron. Reliab.	2011	DBLP DOI BibTeX RDF
15	Hsien-Chin Chiu, Chia-Shih Cheng, Hsuan-Ling Kao, Jeffrey S. Fu, Qiang Cui, Juin J. Liou	A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology.	Microelectron. Reliab.	2011	DBLP DOI BibTeX RDF
15	Seong-Jun Kang, Sung-Seok Lee	The role of EL2 in the infrared transmission images of defects in semi-insulating GaAs.	J. Inform. and Commun. Convergence Engineering	2011	DBLP DOI BibTeX RDF
15	Abdul Manaf Hashim, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, Abdul Rahim Abdul Rahman	Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications.	Sensors	2011	DBLP DOI BibTeX RDF
15	Ashkan Horri, Rahim Faez, Hamid Reza Hoseini	A small signal circuit model of two mode InAs/GaAs quantum dot laser.	IEICE Electron. Express	2011	DBLP DOI BibTeX RDF
15	Shanggong Feng, Yanhu Chen, Huijun Li, Minghua Zhang	A new method to improve the unconditional stability of InGaP/GaAs heterojunction bipolar transistor.	ASICON	2011	DBLP DOI BibTeX RDF
15	B. K. Mishra 0001, Lochan Jolly, K. Patil	Modeling of GaAs MESFET under back illumination.	ICWET	2011	DBLP DOI BibTeX RDF
15	Bhaskar Gopalan	A SPICE Macromodel for the Analysis of Lossy Dispersive Coupled GaAs Interconnect Line System.	VLSI Design	2011	DBLP DOI BibTeX RDF
15	Kyunggon Choi, Min-Su Kim, Hyungchul Kim, Sung-Chan Jung, Jaeyong Cho, Sungchul Yoo, Yong Hwan Kim, Hyungmo Yoo, Youngoo Yang	A Highly Linear Two-Stage Amplifier Integrated Circuit Using InGaP/GaAs HBT.	IEEE J. Solid State Circuits	2010	DBLP DOI BibTeX RDF
15	Yo Yamaguchi, Takana Kaho, Motoharu Sasaki, Kenjiro Nishikawa, Tomohiro Seki, Tadao Nakagawa, Kazuhiro Uehara, Kiyomichi Araki	An Analysis of Multi-Layer Inductors for Miniaturizing of GaAs MMIC.	IEICE Trans. Electron.	2010	DBLP DOI BibTeX RDF
15	Ryo Ishikawa, Junichi Kimura, Yukio Takahashi, Kazuhiko Honjo	Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit.	IEICE Trans. Electron.	2010	DBLP DOI BibTeX RDF
15	P. S. Das, Abhijit Biswas	Charge trapping and reliability characteristics of ultra-thin HfYOx films on n-GaAs substrates.	Microelectron. Reliab.	2010	DBLP DOI BibTeX RDF
15	Hung-Pin D. Yang, Chih-Tsung Shih, Su-Mei Yang, Tsin-Dong Lee	High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range.	Microelectron. Reliab.	2010	DBLP DOI BibTeX RDF
15	Hsien-Chin Chiu, Chao-Hung Chen, Chih-Wei Yang, Jeffrey S. Fu, Cheng-Shun Wang	Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers.	Microelectron. Reliab.	2010	DBLP DOI BibTeX RDF
15	Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou	Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance.	Microelectron. Reliab.	2010	DBLP DOI BibTeX RDF
15	B. Bouabdallah, Y. Bourezig, B. Benichou	Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode.	Microelectron. Reliab.	2010	DBLP DOI BibTeX RDF
15	Bobae Kim, Kwang-Chan Lee, Jongsoo Lee	Effect of bias circuits on receiver band noise of GaAs HBT power amplifiers.	IEICE Electron. Express	2010	DBLP DOI BibTeX RDF
15	Xiaojuan Jia, Binzhen Zhang, Jun Liu 0005, Chenyang Xue, Tingting Hou	Characteristic research on an accelerated sensor based on GaAs/AlGaAs/InGaAs PHEMT.	NEMS	2010	DBLP DOI BibTeX RDF
15	Chenyang Xue, Zhenxin Tan, Tingting Hou, Guowen Liu, Jun Liu 0005, Binzhen Zhang	Temperature-dependence electrical performance of GaAs-based HEMT-embedded accelerometer.	NEMS	2010	DBLP DOI BibTeX RDF
15	Peter J. Zampardi	Will CMOS amplifiers ever Kick-GaAs?	CICC	2010	DBLP DOI BibTeX RDF
15	Jinseong Jeong, Donald F. Kimball, Myoungbo Kwak, Paul Draxler, Chin Hsia, Craig Steinbeiser, Thomas Landon, Oleh Krutko, Lawrence E. Larson, Peter M. Asbeck	High-Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented With GaAs HVHBTs.	IEEE J. Solid State Circuits	2009	DBLP DOI BibTeX RDF
15	Bo Zhang 0031, Yong Fan 0003, Yonghong Zhang	An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator.	IEICE Trans. Electron.	2009	DBLP DOI BibTeX RDF
15	Zheng-Liang Huang, Fa-Xin Yu, Shu-Ting Zhang, Hao Luo 0001, Ping-Hui Wang, Yao Zheng	Empirical-Statistics Analysis for Zero-Failure GaAs MMICs Life Testing Data.	IEICE Trans. Fundam. Electron. Commun. Comput. Sci.	2009	DBLP DOI BibTeX RDF
15	Jaroslav Kovác, Jaroslava Skriniarová, Martin Florovic, J. Jakabovic, Jozef Chovan, R. Srnánek, A. Vincze, B. Sciana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczala	Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Mohammad Abdulaziz Alduraibi, C. Mitchell, S. Chakraborty 0001, Mohamed Missous	Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	James Mc Tavish, Zoran Ikonic, Dragan Indjin, Paul Harrison	Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	F. A. M. Marques, A. F. G. Monte, Mark Hopkinson	Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Robert Kudrawiec, P. Poloczek, Jan Misiewicz, M. Shafi, J. Ibáñez, R. H. Mari, Mohamed Henini, M. Schmidbauer, S. V. Novikov, Lyudmila Turyanska, Sergio I. Molina, D. L. Sales, M. F. Chisholm	Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Abdelkader Aissat, Said Nacer, M. Bensebti, Jean-Pierre Vilcot	Low sensitivity to temperature compressive-strained structure quantum well laser Ga1-xInxAs1-yNy/GaAs.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Giovanna Trevisi, Luca Seravalli, P. Frigeri, Mirko Prezioso, J. C. Rimada, E. Gombia, R. Mosca, L. Nasi, C. Bocchi, S. Franchi	The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	T. Nuytten, Manus Hayne, Mohamed Henini, V. V. Moshchalkov	Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	J. P. Coe, A. Sudbery, Irene D'Amico	Entanglement in GaAs and CdSe quantum dots: Exact calculations and DFT approximations.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Shumin Wang, Huan Zhao, Göran Adolfsson, Yongqiang Wei, Q. X. Zhao, Johan S. Gustavsson, Mahdad Sadeghi, Anders Larsson	Dilute nitrides and 1.3 µm GaInNAs quantum well lasers on GaAs.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	R. J. Kashtiban, Ursel Bangert, Mohamed Missous	Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Y. Sun, N. Balkan, A. Erol, M. C. Arikan	Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Qi Wang 0036, Xiaomin Ren, Hui Huang 0002, Yongqing Huang, Shiwei Cai	Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Mükremin Yilmaz, Y. Sun, Naci Balkan, Bülent Ulug, A. Ulug, M. Sopanen, O. Reentilä, M. Mattila, Chantal Fontaine, A. Arnoult	Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	P. C. M. Machado, F. A. P. Osório, A. N. Borges	Quasi-one-dimensional polaron gas in a GaAs quantum wire.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	Jan Vanis, Jirí Zelinka, Václav Malina, Mohamed Henini, Jirí Pangrác, Karel Melichar, Eduard Hulicius, Filip Sroubek, Jarmila Walachová	Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE.	Microelectron. J.	2009	DBLP DOI BibTeX RDF
15	C. Gil, Peter Ersland, A. Li	Determining DC/RF survivability limits of GaAs semiconductor circuits.	Microelectron. Reliab.	2009	DBLP DOI BibTeX RDF
15	Takayuki Hisaka, Hajime Sasaki, Yoichi Nogami, Kenji Hosogi, Naohito Yoshida, Anita A. Villanueva, Jesús A. del Alamo, Shigehiko Hasegawa, Hajime Asahi	Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions.	Microelectron. Reliab.	2009	DBLP DOI BibTeX RDF
15	H. Altuntas, S. Altindal, H. Shtrikman, Suleyman Özçelik	A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range.	Microelectron. Reliab.	2009	DBLP DOI BibTeX RDF