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Found 445 publication records. Showing 445 according to the selection in the facets
Hits ?▲ |
Authors |
Title |
Venue |
Year |
Link |
Author keywords |
85 | Norfarariyanti Bte Parimon, Siti Suhaila Bte Mohd Yusof, Abdul Manaf Bin Hashim |
Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Asia International Conference on Modelling and Simulation ![In: Second Asia International Conference on Modelling and Simulation, AMS 2008, Kuala Lumpur, Malaysia, May 13-15, 2008, pp. 987-989, 2008, IEEE Computer Society, 978-0-7695-3136-6. The full citation details ...](Pics/full.jpeg) |
2008 |
DBLP DOI BibTeX RDF |
Schottky diode, Rectenna, HEMT structure, IQ chip |
66 | Zon Fazlila Mohd Ahir, Ahmad Zarif Zulkifli, Abdul Manaf Hashim |
Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Asia International Conference on Modelling and Simulation ![In: Second Asia International Conference on Modelling and Simulation, AMS 2008, Kuala Lumpur, Malaysia, May 13-15, 2008, pp. 990-993, 2008, IEEE Computer Society, 978-0-7695-3136-6. The full citation details ...](Pics/full.jpeg) |
2008 |
DBLP DOI BibTeX RDF |
Plasma wave, Interdigital, Negative conductance, HEMT, Terahertz |
57 | Marco Balsi, Francesco Centurelli, Piero Marietti, Giuseppe Scotti, Pasquale Tommasino, Alessandro Trifiletti, Giancarlo Valente |
Validation of a statistical non-linear model of GaAs HEMT MMIC's by hypothesis testing and principal components analysis. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS ![In: International Symposium on Circuits and Systems (ISCAS 2006), 21-24 May 2006, Island of Kos, Greece, 2006, IEEE, 0-7803-9389-9. The full citation details ...](Pics/full.jpeg) |
2006 |
DBLP DOI BibTeX RDF |
|
57 | Gaetano Palumbo, Pasquale Tommasino, Alessandro Trifiletti |
Optimized design of source coupled logic gates in GaAs HEMT technology. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS (4) ![In: International Symposium on Circuits and Systems (ISCAS 2005), 23-26 May 2005, Kobe, Japan, pp. 3583-3586, 2005, IEEE, 0-7803-8834-8. The full citation details ...](Pics/full.jpeg) |
2005 |
DBLP DOI BibTeX RDF |
|
57 | Chiaki Takano, Zhiping Yu, Robert W. Dutton |
A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. ![In: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9(11), pp. 1217-1224, 1990. The full citation details ...](Pics/full.jpeg) |
1990 |
DBLP DOI BibTeX RDF |
|
48 | Takao Waho, Kevin J. Chen, Masafumi Yamamoto |
A Literal Gate Using Resonant-Tunneling Devices. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISMVL ![In: 26th IEEE International Symposium on Multiple-Valued Logic, ISMVL 1996, Santiago de Compostela, Spain, May 29-31, 1996, Proceedings, pp. 68-73, 1996, IEEE Computer Society, 0-8186-7392-3. The full citation details ...](Pics/full.jpeg) |
1996 |
DBLP DOI BibTeX RDF |
Resonant tunneling, quantum effect, HEMT, RTD, literal |
37 | Aderinto J. Ogunniyi, Stanley L. Henriquez, Caroline W. Karangu, Corey Dickens, Carl White |
Accurate Modeling of Drain Current Derivatives of MESFET/HEMT Devices for Intermodulation Analysis. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS ![In: International Symposium on Circuits and Systems (ISCAS 2007), 27-20 May 2007, New Orleans, Louisiana, USA, pp. 1013-1016, 2007, IEEE, 1-4244-0920-9. The full citation details ...](Pics/full.jpeg) |
2007 |
DBLP DOI BibTeX RDF |
|
37 | Bin Zhang, K. J. Chen, Ruan Gang, Richard M. M. Chen |
A novel RTD-HEMT-RTD structure based on simulations. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS (1) ![In: Proceedings of the 1999 International Symposium on Circuits and Systems, ISCAS 1999, Orlando, Florida, USA, May 30 - June 2, 1999, pp. 178-181, 1999, IEEE, 0-7803-5471-0. The full citation details ...](Pics/full.jpeg) |
1999 |
DBLP DOI BibTeX RDF |
|
37 | Tahui Wang, Sheng-Jyh Wu, Chimoon Huang |
Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. ![In: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(11), pp. 1758-1761, 1993. The full citation details ...](Pics/full.jpeg) |
1993 |
DBLP DOI BibTeX RDF |
|
28 | Masafumi Yamamoto, Hideaki Matsuzaki, Toshihiro Itoh, Takao Waho, T. Akeyoshi, J. Osaka |
Ultrahigh-Speed Circuits Using Resonant Tunneling Devices. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Great Lakes Symposium on VLSI ![In: 9th Great Lakes Symposium on VLSI (GLS-VLSI '99), 4-6 March 1999, Ann Arbor, MI, USA, pp. 150-153, 1999, IEEE Computer Society, 0-7695-0104-4. The full citation details ...](Pics/full.jpeg) |
1999 |
DBLP DOI BibTeX RDF |
HEMT, D-FF, optoelectronic circuit, ADC, resonant tunneling diode |
28 | Kanad Chakraborty, Pinaki Mazumder |
Technology and layout-related testing of static random-access memories. ![Search on Bibsonomy](Pics/bibsonomy.png) |
J. Electron. Test. ![In: J. Electron. Test. 5(4), pp. 347-365, 1994. The full citation details ...](Pics/full.jpeg) |
1994 |
DBLP DOI BibTeX RDF |
Array layout, cell technology, Gallium Arsenide (GaAs), high electron mobility transistor (HEMT) RAMs, I DD testing, I DDQ testing |
20 | Jeongwon Cha, Minsik Ahn, Changhyuk Cho, Chang-Ho Lee, Joy Laskar |
A charge-pump based 0.35µm CMOS RF switch driver for multi-standard operations. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS ![In: International Symposium on Circuits and Systems (ISCAS 2008), 18-21 May 2008, Sheraton Seattle Hotel, Seattle, Washington, USA, pp. 452-455, 2008, IEEE, 978-1-4244-1683-7. The full citation details ...](Pics/full.jpeg) |
2008 |
DBLP DOI BibTeX RDF |
|
20 | Takao Waho, Akinori Yamada, Hiroki Okuyama, Victor Khorenko, Thai Do, Werner Prost |
A Four-Resonant-Tunneling-Diode (4RTD) NAND/NOR Logic Gate. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS ![In: International Symposium on Circuits and Systems (ISCAS 2007), 27-20 May 2007, New Orleans, Louisiana, USA, pp. 129-132, 2007, IEEE, 1-4244-0920-9. The full citation details ...](Pics/full.jpeg) |
2007 |
DBLP DOI BibTeX RDF |
|
20 | Keisuke Eguchi, Masaru Chibashi, Takao Waho |
A Design of 10-GHz Delta-Sigma Modulator using a 4-Level Differential Resonant-Tunneling Quantizer. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISMVL ![In: 35th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2005), 18-21 May 2005, Calgary, Canada, pp. 43-47, 2005, IEEE Computer Society, 0-7695-2336-6. The full citation details ...](Pics/full.jpeg) |
2005 |
DBLP DOI BibTeX RDF |
|
20 | Naokazu Muramatsu, Hiroshi Okazaki, Takao Waho |
A novel oscillation circuit using a resonant-tunneling diode. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS (3) ![In: International Symposium on Circuits and Systems (ISCAS 2005), 23-26 May 2005, Kobe, Japan, pp. 2341-2344, 2005, IEEE, 0-7803-8834-8. The full citation details ...](Pics/full.jpeg) |
2005 |
DBLP DOI BibTeX RDF |
|
20 | Yuki Tsuji, Takao Waho |
Multiple-Input Resonant-Tunneling Logic Gates for Flash A/D Converter Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISMVL ![In: 34th IEEE International Symposium on Multiple-Valued Logic (ISMVL 2004), 19-22 May 2004, Toronto, Canada, pp. 8-13, 2004, IEEE Computer Society, 0-7695-2130-4. The full citation details ...](Pics/full.jpeg) |
2004 |
DBLP DOI BibTeX RDF |
|
20 | Marcelino Lázaro, Ignacio Santamaría, Carlos Pantaleón, Cesar Navarro, Antonio Tazón, Tomás Fernández Ibáñez |
A Modular Neural Network for Global Modeling of Microwave Transistors. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IJCNN (4) ![In: Proceedings of the IEEE-INNS-ENNS International Joint Conference on Neural Networks, IJCNN 2000, Neural Computing: New Challenges and Perspectives for the New Millennium, Como, Italy, July 24-27, 2000, Volume 4, pp. 389-394, 2000, IEEE Computer Society. The full citation details ...](Pics/full.jpeg) |
2000 |
DBLP DOI BibTeX RDF |
|
20 | Hideaki Matsuzaki, Toshihiro Itoh, Masafumi Yamamoto |
A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Great Lakes Symposium on VLSI ![In: 9th Great Lakes Symposium on VLSI (GLS-VLSI '99), 4-6 March 1999, Ann Arbor, MI, USA, pp. 154-157, 1999, IEEE Computer Society, 0-7695-0104-4. The full citation details ...](Pics/full.jpeg) |
1999 |
DBLP DOI BibTeX RDF |
|
20 | Andreas Thiede, Zhi-Gong Wang, Michael Schlechtweg, Manfred Lang, Petra Leber, Zhihao Lao, Ulrich Nowotny, Volker Hurm, Michaela Rieger-Motzer, Manfred Ludwig, Martin Sedler, Klaus Köhler, Wolfgang Bronner, Jochen Hornung, Axel Hülsmann, Gudrun Kaufel, Bryan Raynor, Joachim Schneider, Theo Jakobus, Jürgen Schroth, Manfred Berroth |
Mixed signal integrated circuits based on GaAs HEMTs. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Very Large Scale Integr. Syst. ![In: IEEE Trans. Very Large Scale Integr. Syst. 6(1), pp. 6-17, 1998. The full citation details ...](Pics/full.jpeg) |
1998 |
DBLP DOI BibTeX RDF |
|
20 | Takao Waho, Masafumi Yamamoto |
Application of Resonant-Tunneling Quaternary Quantizer to Ultrahigh-Speed A/D Converter. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISMVL ![In: 27th IEEE International Symposium on Multiple-Valued Logic, ISMVL 1997, Antigonish, Nova Scotia, Canada, May 28-30, 1997, Proceedings, pp. 35-40, 1997, IEEE Computer Society, 0-8186-7910-7. The full citation details ...](Pics/full.jpeg) |
1997 |
DBLP DOI BibTeX RDF |
|
20 | Sundarar Mohan, Pinaki Mazumder |
Analytical and simulation studies of failure modes in SRAMs using high electron mobility transistors. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. ![In: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(12), pp. 1885-1896, 1993. The full citation details ...](Pics/full.jpeg) |
1993 |
DBLP DOI BibTeX RDF |
|
20 | Hal R. Yeager, Robert W. Dutton |
Improvement in norm-reducing Newton methods for circuit simulation. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. ![In: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(5), pp. 538-546, 1989. The full citation details ...](Pics/full.jpeg) |
1989 |
DBLP DOI BibTeX RDF |
|
17 | Aaron Wadsworth, Matthew Pearce, Duleepa J. Thrimawithana |
A Cryogenic 3-kW GaN E-HEMT Synchronous Buck Converter. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Ind. Electron. ![In: IEEE Trans. Ind. Electron. 71(7), pp. 7075-7084, 2024. The full citation details ...](Pics/full.jpeg) |
2024 |
DBLP DOI BibTeX RDF |
|
17 | Jinyao Zhang, Yi Huang, Jiafeng Zhou |
A Wide Dynamic Range Rectifier Based on HEMT With a Variable Self-Bias Voltage. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Circuits Syst. II Express Briefs ![In: IEEE Trans. Circuits Syst. II Express Briefs 71(2), pp. 547-551, February 2024. The full citation details ...](Pics/full.jpeg) |
2024 |
DBLP DOI BibTeX RDF |
|
17 | Nadim Ahmed, Gourab Dutta |
Extraction of device parameters from capacitance-voltage characteristics of p-GaN/AlGaN/GaN HEMT. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 143, pp. 106047, January 2024. The full citation details ...](Pics/full.jpeg) |
2024 |
DBLP DOI BibTeX RDF |
|
17 | Haiyi Cai, Jincan Zhang, Shaowei Wang, Min Liu, Juwei Zhang |
Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 143, pp. 106056, January 2024. The full citation details ...](Pics/full.jpeg) |
2024 |
DBLP DOI BibTeX RDF |
|
17 | Soyeon Seo, Jinho Lee, Yongho Lee, Hyunchol Shin |
A 28 GHz 5-Bit Phase Shifter MMIC with 5.4° RMS Phase Error in GaN HEMT Process. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICEIC ![In: International Conference on Electronics, Information, and Communication, ICEIC 2024, Taipei, Taiwan, January 28-31, 2024, pp. 1-4, 2024, IEEE, 979-8-3503-7188-8. The full citation details ...](Pics/full.jpeg) |
2024 |
DBLP DOI BibTeX RDF |
|
17 | Mingqiang Geng, Giovanni Crupi, Jialin Cai |
Accurate and Effective Nonlinear Behavioral Modeling of a 10-W GaN HEMT Based on LSTM Neural Networks. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Access ![In: IEEE Access 11, pp. 27267-27279, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
|
17 | Longfei Yang, Huiqing Sun, Ruipeng Lv, Zhen Liu, Yuanhao Zhang, Penglin Wang, Yuan Li, Yong Huang, Zhiyou Guo |
Enhancement-Mode HEMT Performance and Mitigating Delay Through Double-Heterojunction With Connect Channel Utilization for Trap Effect Reduction. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Access ![In: IEEE Access 11, pp. 134230-134238, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
|
17 | Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar, Amit Krishna Dwivedi, Manisha Guduri, Aminul Islam 0002 |
Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Access ![In: IEEE Access 11, pp. 133115-133130, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
|
17 | Wenjuan Mei, Zhen Liu 0003, Chaowu Pan, Ouhang Li, Yuanzhang Su, Qi Zhou |
Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Instrum. Meas. ![In: IEEE Trans. Instrum. Meas. 72, pp. 1-11, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
|
17 | Bo Yi, Yi Xu, LiTian Zheng, Junji Cheng, Haimeng Huang, MouFu Kong, Hongqiang Yang |
Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 139, pp. 105895, September 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Binola K. Jebalin, G. Gifta, S. Angen, P. Prajoon, D. Nirmal |
Investigation of variable field plate length in GaN HEMT on SiC substrate for MMIC applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 138, pp. 105866, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari |
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 140, pp. 105923, October 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Nisha Chugh, Subhasis Haldar, Monika Bhattacharya, R. S. Gupta |
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 138, pp. 105857, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Ahmet Toprak, Ekmel Özbay |
Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 135, pp. 105762, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Mengxiao Lian, Yian Yin, Jialin Li, Bingzhi Zou, Keming Zhang, Xichen Zhang, Yafang Xie, You Wu, Zhixiang Zhang |
9 mV/V ultra-low DIBL of suppressing SCEs in InAlN/GaN HEMT with lattice-matched InxAlyGa(1-x-y)N back-barrier for RF device. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 137, pp. 105828, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Haiyi Cai, Jincan Zhang, Min Liu, Shi Yang, Shaowei Wang, Bo Liu 0031, Juwei Zhang |
Adaptive particle swarm optimization based hybrid small-signal modeling of GaN HEMT. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 137, pp. 105834, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Masaru Sato 0001, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe |
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEICE Trans. Electron. ![In: IEICE Trans. Electron. 106(10), pp. 605-613, October 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Pere Lluís Gilabert, Jose-Ramon Perez-Cisneros, Zhixiong Ren, Gabriel Montoro, María de Las Nieves Ruiz Lavín, Jose A. García 0002 |
Digital Predistortion Linearization of a GaN HEMT Push-Pull Power Amplifier for Cable Applications With High Fractional Bandwidth. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Broadcast. ![In: IEEE Trans. Broadcast. 69(2), pp. 516-527, June 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Lorenzo Pagnini, Giovanni Collodi, Alessandro Cidronali |
A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Sensors ![In: Sensors 23(9), pp. 4479, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Jeong-Geun Kim, Donghyun Baek |
A Wideband True Time Delay Circuit Using 0.25 µm GaN HEMT Technology. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Sensors ![In: Sensors 23(15), pp. 6827, August 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Hyeonseok Lee, Hyeong-Geun Park, Van-Du Le, Van-Phu Nguyen, Jeong-Moon Song, Bok-Hyung Lee, Jung-Dong Park |
X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Sensors ![In: Sensors 23(10), pp. 4840, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Xuefei Xuan, Zhiqun Cheng, Zhiwei Zhang, Tingwei Gong, Guohua Liu, Chao Le |
Design of a highly efficient 0.6-4.5GHz multioctave bandwidth GaN-HEMT power amplifier. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEICE Electron. Express ![In: IEICE Electron. Express 20(7), pp. 20230049, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Jianjun Ding, Haomiao Wei, Yanzhe Wang, Zhengwei Lu, Wuchang Ding |
A distributed small signal model extraction method based on FW-EM simulation for InP HEMT. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEICE Electron. Express ![In: IEICE Electron. Express 20(9), pp. 20230114, 2023. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Dongyang Yan, Yang Zhang 0081, Mark Ingels, Piet Wambacq |
A 0.13μm GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
PRIME ![In: 18th Conference on Ph.D Research in Microelectronics and Electronics, PRIME 2023, Valencia, Spain, June 18-21, 2023, pp. 1-4, 2023, IEEE, 979-8-3503-0320-9. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Zhenkai Ding, Chupeng Yi, Yang Lu, Xiaohua Ma |
A Ka-band Wideband Power Synthesis Power Amplifier MMIC Utilizing Advanced 0.15μm GaN HEMT Technology. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICNCC ![In: Proceedings of the 12th International Conference on Networks, Communication and Computing, ICNCC 2023, Osaka, Japan, December 15-17, 2023, pp. 162-167, 2023, ACM. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Bagylan Kadirbay, Saddam Husain, Anwar Jarndal, Mohammad S. Hashmi |
Comparison of ANFIS and ANN for Small-Signal Modelling of GaN HEMT up to 40 GHz. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICM ![In: International Conference on Microelectronics, ICM 2023, Abu Dhabi, United Arab Emirates, December 17-20, 2023, pp. 125-130, 2023, IEEE, 979-8-3503-8082-8. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert |
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IRPS ![In: IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023, pp. 1-5, 2023, IEEE, 978-1-6654-5672-2. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Wenjuan Mei, Chaowu Pan, Zhen Liu 0003, Yuanzhang Su, Yusong Mei, Qi Zhou |
Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation. ![Search on Bibsonomy](Pics/bibsonomy.png) |
I2MTC ![In: IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2023, Kuala Lumpur, Malaysia, May 22-25, 2023, pp. 1-6, 2023, IEEE, 978-1-6654-5383-7. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Kashif Khan, Saddam Husain, Galymzhan Nauryzbayev, Mohammad S. Hashmi |
Development and Evaluation of ANN, ACOR-ANN, ALO-ANN Based Small-Signal Behavioral Models for GaN-on-Si HEMT. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICECS ![In: 30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023, Istanbul, Turkey, December 4-7, 2023, pp. 1-4, 2023, IEEE, 979-8-3503-2649-9. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Qiang Ma 0009, Xiaojun Bi 0003 |
High-Efficiency Class-B/F W-Band Balanced Frequency Sixtupler in GaN HEMT Technology. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICTA ![In: IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2023, Hefei, China, October 27-29, 2023, pp. 27-28, 2023, IEEE, 979-8-3503-4428-8. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Weihao Lu 0005, Sheng Li, Siyang Liu 0002, Yanfeng Ma, Long Zhang, Jiaxing Wei, Weifeng Sun, Yiheng Li, Yuanyang Xia, Ke Wang, Tinggang Zhu |
Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICTA ![In: IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2023, Hefei, China, October 27-29, 2023, pp. 13-14, 2023, IEEE, 979-8-3503-4428-8. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Yushan Liu, Jianyu Cao, Xiao Li, Yupeng Liu |
Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IECON ![In: 49th Annual Conference of the IEEE Industrial Electronics Society, IECON 2023, Singapore, October 16-19, 2023, pp. 1-6, 2023, IEEE, 979-8-3503-3182-0. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Cristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay |
Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
BCICTS ![In: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023, pp. 288-291, 2023, IEEE, 979-8-3503-0764-1. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Anthony E. Parker, Simon J. Mahon |
GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
BCICTS ![In: IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023, pp. 300-303, 2023, IEEE, 979-8-3503-0764-1. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Ji-Seung Seo, Soo-Chang Chae, Kwang-Ho Ahn, Ki-Jin Kim |
A Design of Low Noise InP HEMT LNA based on device modeling. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICTC ![In: 14th International Conference on Information and Communication Technology Convergence, ICTC 2023, Jeju Island, Korea, Republic of, October 11-13, 2023, pp. 1569-1571, 2023, IEEE, 979-8-3503-1327-7. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen |
Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS ![In: IEEE International Symposium on Circuits and Systems, ISCAS 2023, Monterey, CA, USA, May 21-25, 2023, pp. 1-4, 2023, IEEE, 978-1-6654-5109-3. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Zhongzhiguang Lu, Hanlin Xie, Jiaming Piao, Wei Zhengzhe, Ng Geok Ing, Yuanjin Zheng |
A Wideband GaN HEMT Modelling with Comprehensive Hybrid Parameter Extraction for 5G Power Amplifiers. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISCAS ![In: IEEE International Symposium on Circuits and Systems, ISCAS 2023, Monterey, CA, USA, May 21-25, 2023, pp. 1-5, 2023, IEEE, 978-1-6654-5109-3. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | D. Nakajima, K. Nishimura, M. Watanabe, T. T. Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou |
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal. ![Search on Bibsonomy](Pics/bibsonomy.png) |
OFC ![In: Optical Fiber Communications Conference and Exhibition, OFC 2023, San Diego, CA, USA, March 5-9, 2023, pp. 1-3, 2023, IEEE, 978-1-957171-18-0. The full citation details ...](Pics/full.jpeg) |
2023 |
DBLP DOI BibTeX RDF |
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17 | Junzhe Tan, Dongyi Yang, Shiqiang Wu, Yuhao Zhu 0004, Yaoyao Pan, Pengju Cui, Wen Liu |
Simulation and Analysis of Two GaN MIS-HEMT-Based Step-down Level Shifters. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICICDT ![In: International Conference on IC Design and Technology, ICICDT 2023, Tokyo, Japan, September 25-28, 2023, pp. 52-56, 2023, IEEE, 979-8-3503-1931-6. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Nicholas C. Miller, Matt Grupen, John D. Albrecht |
Recent Advances in GaN HEMT Modeling using Fermi Kinetics Transport. ![Search on Bibsonomy](Pics/bibsonomy.png) |
DRC ![In: Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023, pp. 1, 2023, IEEE, 979-8-3503-2310-8. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper |
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. ![Search on Bibsonomy](Pics/bibsonomy.png) |
DRC ![In: Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023, pp. 1-2, 2023, IEEE, 979-8-3503-2310-8. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Lingyan Shen, Xinhong Cheng, Li Zheng, Yuehui Yu |
A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability. ![Search on Bibsonomy](Pics/bibsonomy.png) |
DRC ![In: Device Research Conference, DRC 2023, Santa Barbara, CA, USA, June 25-28, 2023, pp. 1-2, 2023, IEEE, 979-8-3503-2310-8. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Sami Ghedira, Abdelaali Fargi, Adel Kalboussi |
On The Effect Of Optical Power On Quantum Dot HEMT Transistor. ![Search on Bibsonomy](Pics/bibsonomy.png) |
SSD ![In: 20th International Multi-Conference on Systems, Signals & Devices, SSD 2023, Mahdia, Tunisia, February 20-23, 2023, pp. 856-861, 2023, IEEE, 979-8-3503-3256-8. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Jialin Cai, Giovanni Gugliandolo, Zlatica Marinkovic, Mariangela Latino, Enza Fazio, Gianni Bosi, Antonio Raffo, Giovanni Crupi, Nicola Donato |
GaN HEMT Small-Signal Modeling Using an Optimization Strategy Based on Gated Recurrent Unit Networks. ![Search on Bibsonomy](Pics/bibsonomy.png) |
MetroXRAINE ![In: IEEE International Conference on Metrology for eXtended Reality, Artificial Intelligence and Neural Engineering, MetroXRAINE 2023, Milano, Italy, October 25-27, 2023, pp. 422-426, 2023, IEEE, 979-8-3503-0080-2. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Fabian Thome, Laurenz John, Bersant Gashi, Axel Tessmann, Arnulf Leuther, Sébastien Chartier |
InGaAs HEMT Technology for Submillimeter-Wave and Ultra-Wideband Monolithic Integrated Circuits. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IGARSS ![In: IEEE International Geoscience and Remote Sensing Symposium, IGARSS 2023, Pasadena, CA, USA, July 16-21, 2023, pp. 565-567, 2023, IEEE, 979-8-3503-2010-7. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Kashif Khan, Saddam Husain, Galymzhan Nauryzbayev, Mohammad S. Hashmi |
On Temperature-Dependent Small-Signal Behavioral Modelling of GaN HEMT Using GWO-PSO and WOA. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISNCC ![In: International Symposium on Networks, Computers and Communications, ISNCC 2023, Doha, Qatar, October 23-26, 2023, pp. 1-6, 2023, IEEE, 979-8-3503-3559-0. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Bagylan Kadirbay, Saddam Husain, Mohammad S. Hashmi |
Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISNCC ![In: International Symposium on Networks, Computers and Communications, ISNCC 2023, Doha, Qatar, October 23-26, 2023, pp. 1-6, 2023, IEEE, 979-8-3503-3559-0. The full citation details ...](Pics/full.jpeg) |
2023 |
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17 | Jia Guo, Giovanni Crupi, Jialin Cai |
A Novel Design Methodology for a Multioctave GaN-HEMT Power Amplifier Using Clustering Guided Bayesian Optimization. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Access ![In: IEEE Access 10, pp. 52771-52781, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Nipun Sharma, Adarsh Nigam, Dmitry Lobanov, Ankur Gupta, Alexey Novikov, Mahesh Kumar |
Mercury (II) Ion Detection Using AgNWs-MoS2 Nanocomposite on GaN HEMT for IoT-Enabled Smart Water Quality Analysis. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Internet Things J. ![In: IEEE Internet Things J. 9(16), pp. 14317-14324, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Shaowei Wang, Jincan Zhang, Min Liu, Bo Liu 0031, Jinchan Wang, Shi Yang |
Large-Signal Behavior Modeling of GaN P-HEMT Based on GA-ELM Neural Network. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Circuits Syst. Signal Process. ![In: Circuits Syst. Signal Process. 41(4), pp. 1834-1847, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Mousa Karimi, Mohamed Ali 0001, Amir Aghajani, Ahmad Hassan, Mohamad Sawan, Benoit Gosselin |
A 9.2-ns to 1-s Digitally Controlled Multituned Deadtime Optimization for Efficient GaN HEMT Power Converters. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEEE Trans. Circuits Syst. I Regul. Pap. ![In: IEEE Trans. Circuits Syst. I Regul. Pap. 69(11), pp. 4381-4394, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Nisarga Chand, Sarosij Adak, Sanjit Kumar Swain, Sudhansu Mohan Biswal, Angsuman Sarkar |
Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Comput. Electr. Eng. ![In: Comput. Electr. Eng. 98, pp. 107695, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Haiyong Wang, Wei Mao, Shenglei Zhao, Yuanhao He, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao |
Unidirectional p-GaN gate HEMT with composite source-drain field plates. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Sci. China Inf. Sci. ![In: Sci. China Inf. Sci. 65(2), 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Manishankar Prasad Gupta, Pradeep Gorre, Sandeep Kumar 0003, Venugopal Nulu |
A wideband, 25/40dBm high I/O power GaN HEMT ultra-low noise amplifier using even-odd mode techniques. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 128, pp. 105551, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Baozhu Wang, Jinyuan Zhao, Ming Zhang, Lin Yang 0006, Jianchao Wang, Weimin Hou |
Lifetime prediction and analysis of AlGaN/GaN HEMT devices under temperature stress. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 121, pp. 105370, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Shaowei Wang, Jincan Zhang, Shi Yang, Na Li, Jinchan Wang, Min Liu |
Behavioral-level modeling of GaN HEMT small-signal intrinsic noise based on DE-SVR algorithm. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Microelectron. J. ![In: Microelectron. J. 123, pp. 105426, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Mario Cacciato, Giuseppe Aiello, Francesco Gennaro, Salvatore Mita, Dario Patti, Giacomo Scelba, Arjun Sujeeth |
Power Loss Modelling of GaN HEMT based 3L ANPC Three Phase Inverter for different PWM Techniques. ![Search on Bibsonomy](Pics/bibsonomy.png) |
CoRR ![In: CoRR abs/2212.05246, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Luong Duy Manh, Van-Phuc Hoang, Xuan Nam Tran |
A Cost-Effective 5-W GaN HEMT Power Amplifier for Sub-6-GHz 5G Wireless Communications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
Mob. Networks Appl. ![In: Mob. Networks Appl. 27(4), pp. 1757-1767, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Akio Wakejima, Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura |
AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEICE Trans. Electron. ![In: IEICE Trans. Electron. 105-C(10), pp. 457-465, October 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Aoi Oyane, Thilak Senanayake, Mitsuru Masuda, Jun Imaoka, Masayoshi Yamamoto |
13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by 'L-S Network'. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEICE Trans. Electron. ![In: IEICE Trans. Electron. 105-C(9), pp. 407-418, September 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Jian Jin, Mengyuan Sun, Yannan Yang, Min Xu, David Wei Zhang |
A high-speed low side GaN e-HEMT driver with gate ringing and overshoot suppression. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IEICE Electron. Express ![In: IEICE Electron. Express 19(10), pp. 20220144, 2022. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Mamta Pradhan, Matthias Moser, Mohammed Alomari, Joachim N. Burghartz, Ingmar Kallfass |
Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ESSDERC ![In: 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022, pp. 400-403, 2022, IEEE, 978-1-6654-8497-8. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Loizos Efthymiou, Martin Arnold, Giorgia Longobardi, Florin Udrea |
A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ESSDERC ![In: 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022, pp. 396-399, 2022, IEEE, 978-1-6654-8497-8. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini |
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IRPS ![In: IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022, pp. 11, 2022, IEEE, 978-1-6654-7950-9. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Satyaki Ganguly, Kyle M. Bothe, Alexandre Niyonzima, Thomas Smith, Yueying Liu, Jeremy Fisher, Fabian Radulescu, Donald A. Gajewski, Scott T. Sheppard, Jim W. Milligan, Basim Noori, John W. Palmour |
DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited). ![Search on Bibsonomy](Pics/bibsonomy.png) |
IRPS ![In: IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022, pp. 11, 2022, IEEE, 978-1-6654-7950-9. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Jian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Li-Fan Chen, Yeh-Ning Jou, Shin-Cheng Lin, Walter Wohlmuth, Chih-Cherng Liao, Ching-Ho Li, Shoa-Chang Huang, Ke-Horng Chen |
Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IRPS ![In: IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022, pp. 2, 2022, IEEE, 978-1-6654-7950-9. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Hao Lu, Likun Zhou, Longge Deng, Ling Yang 0003, Bin Hou, Xiaohua Ma, Yue Hao |
First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICTA ![In: 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2022, Xi'an, China, October 28-30, 2022, pp. 30-31, 2022, IEEE, 978-1-6654-9269-0. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Lei Huang, Huanpeng Wang, Qingzhi Wu, Shuman Mao, Yuehang Xu |
Characterization and Modeling of Trapping Effects in GaAs Enhanced HEMT under High Input Dynamic Range. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICTA ![In: 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2022, Xi'an, China, October 28-30, 2022, pp. 92-93, 2022, IEEE, 978-1-6654-9269-0. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Yinling Hou, Junqing Xu, Shiyuan Wang, Diang Li, Yuanbo Guo, Xiaohua Zhang |
Design of Digital-controlled Two-stage AC/DC Converter Based on GaN HEMT. ![Search on Bibsonomy](Pics/bibsonomy.png) |
IECON ![In: IECON 2022 - 48th Annual Conference of the IEEE Industrial Electronics Society, Brussels, Belgium, October 17-20, 2022, pp. 1-6, 2022, IEEE, 978-1-6654-8025-3. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata |
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network. ![Search on Bibsonomy](Pics/bibsonomy.png) |
BCICTS ![In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022, pp. 104-107, 2022, IEEE, 978-1-6654-9132-7. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Kyle M. Bothe, Matthew R. King, Jia Guo, Yueying Liu, Saptha Sriram, Jeremy Fisher, Scott T. Sheppard, Basim Noori |
Capacitance Engineering of GaN HEMT Technologies with Recessed Field Plate. ![Search on Bibsonomy](Pics/bibsonomy.png) |
BCICTS ![In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022, pp. 90-93, 2022, IEEE, 978-1-6654-9132-7. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Keiichi Matsushita, Chih-Yuan Chan, Ju-Hsien Lin, Sheng-Wen Peng, Hung-Kuan Lo, Yu-Syuan Lin, Cheng-Kuo Lin |
Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
BCICTS ![In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022, pp. 94-98, 2022, IEEE, 978-1-6654-9132-7. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Ryan Fang, Dylan Ma, Ujwal Radhakrishna, Lan Wei |
MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping Effects. ![Search on Bibsonomy](Pics/bibsonomy.png) |
BCICTS ![In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022, pp. 21-24, 2022, IEEE, 978-1-6654-9132-7. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Youngmin Kim, Hongjong Park, Iljin Lee, Joonhoi Hur, Sangmin Yoo |
High Efficiency 29-/38-GHz Hybrid Transceiver Front-Ends Utilizing Si CMOS and GaAs HEMT for 5G NR Millimeter-Wave Mobile Applications. ![Search on Bibsonomy](Pics/bibsonomy.png) |
VLSI Technology and Circuits ![In: IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022, pp. 124-125, 2022, IEEE, 978-1-6654-9772-5. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Yu-Yung Kao, Tz-Wun Wang, Sheng-Hsi Hung, Yong-Hwa Wen, Tzu-Hsien Yang, Si-Yi Li, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai |
A Monolithic GaN-Based Driver and GaN Power HEMT with Diode-Emulated GaN Technique for 50MHz Operation and Sub-0.2ns Deadtime Control. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ISSCC ![In: IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022, pp. 228-230, 2022, IEEE, 978-1-6654-2800-2. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Eungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing |
First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. ![Search on Bibsonomy](Pics/bibsonomy.png) |
DRC ![In: Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022, pp. 1-2, 2022, IEEE, 978-1-6654-9883-8. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Saddam Husain, Khamida Begaliyeva, Alisher Aitbayev, Muhammad Akmal Chaudhary, Mohammad S. Hashmi |
Decision Tree Based Small-Signal Modelling of GaN HEMT and CAD Implementation. ![Search on Bibsonomy](Pics/bibsonomy.png) |
ICCE ![In: IEEE International Conference on Consumer Electronics, ICCE 2022, Las Vegas, NV, USA, January 7-9, 2022, pp. 1-6, 2022, IEEE, 978-1-6654-4154-4. The full citation details ...](Pics/full.jpeg) |
2022 |
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17 | Chanchal, Ajay Kumar Visvkarma, Hardhyan Sheoran, Amit Malik, Robert Laishram, Dipendra Singh Rawal, Manoj Saxena |
Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method. ![Search on Bibsonomy](Pics/bibsonomy.png) |
VDAT ![In: VLSI Design and Test - 26th International Symposium, VDAT 2022, Jammu, India, July 17-19, 2022, Revised Selected Papers, pp. 76-84, 2022, Springer, 978-3-031-21513-1. The full citation details ...](Pics/full.jpeg) |
2022 |
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