Search results for "ESSDERC"

Hits ?▲	Authors	Title	Venue	Year	Link
1	Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani	Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Markus Brummayer, Stefan Fuchshumer	Mission Smart Production1.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Maryam Olyaei, B. Gunnar Malm, Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling	Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	G. A. Umana-Membreno, S.-J. Chang, Maryline Bawedin, J. Antoszewski, Sorin Cristoloveanu, L. Faraone	Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETs.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov	Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Arjun Ajaykumar, Xing Zhou, Binit Syamal, Siau Ben Chiah	Compact Fermi potential model for heterostructure HEMTs with rectangular quantum well.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Isabelle Chartier, Stéphanie Jacob, M. Charbonneau, Abdelkader Aliane, Aurelia Plihon, Romain Coppard, Romain Gwoziecki, J. M. Verilhac, Christophe Serbutoviez, Olivier Dhez, Eugenio Cantatore, Fabrice Domingues Dos Santos	Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applications.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Guillaume Besnard, Xavier Garros, François Andrieu, P. Nguyen, W. van den Daele, P. Reynaud, Walter Schwarzenbach, D. Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu	Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Giulia Piccolo, P. I. Kuindersma, L.-Å. Ragnarsson, Raymond J. E. Hueting, Nadine Collaert, Jurriaan Schmitz	Silicon LEDs in FinFET technology.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Z. Kolahdouz Esfahani, T. Ma, Henk W. van Zeijl, G. Q. Zhang, A. Rostamian, Mohammadreza Kolahdouz	Blue selective photodiodes for optical feedback in LED wafer level packages.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier 0002, Daniel Gloria	Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Gaspard Hiblot, Quentin Rafhay, Frédéric Boeuf, Gérard Ghibaudo	Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Hiromitsu Awano, Masayuki Hiromoto, Takashi Sato	Variability in device degradations: Statistical observation of NBTI for 3996 transistors.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Yang Shang, Hao Yu 0001, Chang Yang, Sanming Hu, Minkyu Je	A high-sensitivity 135GHz millimeter-wave imager by differential transmission-line loaded split-ring-resonator in 65nm CMOS.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Claire Fenouillet-Béranger, Bernard Previtali, Perrine Batude, F. Nemouchi, Mikaël Cassé, Xavier Garros, L. Tosti, Nils Rambal, Dominique Lafond, H. Dansas, L. Pasini, Laurent Brunet, Fabien Deprat, M. Gregoire, M. Mellier, Maud Vinet	FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Kaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo	Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Alberto Tosi, Mirko Sanzaro, Niccolo Calandri, Alessandro Ruggeri, Fabio Acerbi	Low dark count rate and low timing jitter InGaAs/InP Single-Photon Avalanche Diode.	ESSDERC	2014	DBLP DOI BibTeX RDF
1		44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014	ESSDERC	2014	DBLP BibTeX RDF
1	Ales Chvála, Daniel Donoval, Lukás Nagy, Juraj Marek, Patrik Pribytny, Marian Molnar	3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die IC.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	D. Cucak, Miroslav Vasic, Óscar García, Yves Bouvier, Jesús Ángel Oliver, Pedro Alou, José A. Cobos, A. Wang, S. Martin-Horcajo, F. Romero, Fernando Calle	Physical model for GaN HEMT design optimization in high frequency switching applications.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Jeroen van den Brand, Margreet de Kok, Ashok Sridhar, Maarten Cauwe, Rik Verplancke, Frederick Bossuyt, Johan de Baets, Jan Vanfleteren	Flexible and stretchable electronics for wearable healthcare.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Anh-Tuan Pham, Seonghoon Jin, Woosung Choi, M. J. Lee, S. H. Cho, Y.-T. Kim, K.-H. Lee, Y. Park	InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theory.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Pengying Chang, Lang Zeng, Xiaoyan Liu, Gang Du	Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Halid Mulaosmanovic, C. Monzio Compagnoni, Niccolo Castellani, G. Carnevale, D. Ventrice, Paolo Fantini, Alessandro S. Spinelli, Andrea L. Lacaita, A. Benvenuti	Data regeneration and disturb immunity of T-RAM cells.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Hamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk	Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	I. Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison	TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Christine Harendt, Zili Yu, Joachim N. Burghartz, Jan Kostelnik, Andreas Kugler, Stefan Saller	Hybrid Systems in foil (HySiF) exploiting ultra-thin flexible chips.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Giacomo Langfelder, Cesare Buffa, Paolo Minotti, Antonio Longoni, Alessandro Tocchio, Sarah Zerbini	Operation of Lorentz-force MEMS magnetometers with on-off current switching.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	James R. Moyne, Martin Schellenberger, Lothar Pfitzner	The Factory Integration Roadmap in Semiconductor manufacturing.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Luigi G. Occhipinti	Innovative manufacturing of large-area electronics.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt	A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Nicola Wrachien, Andrea Cester, Nicolò Lago, Gaudenzio Meneghesso, Riccardo D'Alpaos, Andrea Stefani, Guido Turatti, Michele Muccini	Effects of constant voltage stress on organic complementary logic inverters.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Brian Zimmer, Olivier Thomas, Seng Oon Toh, Taylor Vincent, Krste Asanovic, Borivoje Nikolic	Joint impact of random variations and RTN on dynamic writeability in 28nm bulk and FDSOI SRAM.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Sebastiano Strangio, Pierpaolo Palestri, David Esseni, Luca Selmi, Felice Crupi	Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Marco Barbato, Andrea Cester, Viviana Mulloni, Benno Margesin, Giorgio De Pasquale, Aurelio Somà, Gaudenzio Meneghesso	Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperatures.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Olof Engström, Henryk M. Przewlocki, Ivona Z. Mitrovic, Stephen Hall	Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk properties.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Fabio Marchio, Boris Vittorelli, Roberto Colombo	Automotive electronics: Application & technology megatrends.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	R. Valín, Antonio Martinez, Manuel Aldegunde, John R. Barker	Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Giorgia Longobardi, Florin Udrea, Stephen Sque, Jeroen Croon, Fred Hurkx, Jan Sonsky	The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage	Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Lucio Pancheri, Filippo Savazzi, Gian-Franco Dalla Betta, David Stoppa, Maurizio Boscardin	IR-optimized silicon demodulating detector with 3-dimensional electrodes.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Federica A. Villa, Danilo Bronzi, Michele Vergani, Yu Zou, Alessandro Ruggeri, Franco Zappa, Alberto Dalla Mora	Analog SiPM in planar CMOS technology.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Shiqian Shao, Wei-Cheng Lien, Ayden Maralani, Albert P. Pisano	Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Ajay Bhoolokam, Manoj Nag, Adrian Vaisman Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans	Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Nilay Dagtekin, Adrian M. Ionescu	Investigation of partially gated Si tunnel FETs for low power integrated optical sensing.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Martin Schrems, Joerg Siegert, Peter Dorfi, Jochen Kraft, Ewald Stueckler, Franz Schrank, Siegfried Selberherr	Manufacturing of 3D integrated sensors and circuits.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Kyunghwan Lee, Duckseoung Kang, Hyungcheol Shin, Sangjin Kwon, Shinhyung Kim, Yuchul Hwang	Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memory.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Sehat Sutardja	Slowing of Moore's law signals the beginning of smart everything.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Christopher Lawrence Ayala, Daniel Grogg, Antonios Bazigos, Montserrat Fernandez-Bolaños Badia, Urs Dürig, Michel Despont, Christoph Hagleitner	A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbon.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Christian Schulte-Braucks, Simon Richter, Lars Knoll, Luca Selmi, Qing-Tai Zhao, Siegfried Mantl	Experimental demonstration of improved analog device performance in GAA-NW-TFETs.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni	Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Thomas H. Lee	Terahertz electronics: The last frontier.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Frederic Monsieur, Y. Denis, Denis Rideau, V. Quenette, Gilles Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, Joris Lacord	The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Jukka Hast, Sami Ihme, Jukka-Tapani Mäkinen, Kimmo Keränen, Markus Tuomikoski, Kari Ronka, Harri Kopola	Freeform and flexible electronics manufacturing using R2R printing and hybrid integration techniques.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Sangyong Park, Seongwook Choi, Kwang Sun Jun, HuiJung Kim, SungMan Rhee, Young June Park	Investigation on multiple activation energy of retention in charge trapping memory using self-consistent simulation.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Thomas Holtij, Michael Graef, Alexander Kloes, Benjamín Iñíguez	3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs.	ESSDERC	2014	DBLP DOI BibTeX RDF
1	Zihan Xu, Ketul Sutaria, Chengen Yang, Chaitali Chakrabarti, Yu Cao 0001	Compact modeling of STT-MTJ for SPICE simulation.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Olivier Martin, Éric Colinet, Eric Sage, Cecilia Dupre, Patrick Villard, Sebastien Hentz, Laurent Duraffourg, Thomas Ernst 0005	Impact of process variability on a frequency-addressed NEMS array sensor used for gravimetric detection.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu	Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Vasileios Papageorgiou, Ata Khalid, Matthew J. Steer, Chong Li, David R. S. Cumming	Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-side.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Philipp Mensch, Siegfried F. Karg, Bernd Gotsmann, Pratyush Das Kanungo, Volker Schmidt, Valentina Troncale, Heinz Schmid, Heike Riel	Electrical and thermoelectrical properties of gated InAs nanowires.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Viktoryia Uhnevionak, Christian Strenger, Alexander Burenkov, V. Mortet, Elena Bedel-Pereira, Jürgen Lorenz, Peter Pichler	Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Markus Becherer, Josef Kiermaier, Stephan Breitkreutz, Irina Eichwald, György Csaba, Doris Schmitt-Landsiedel	Nanomagnetic logic clocked in the MHz regime.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Navid Paydavosi, Sriramkumar Venugopalan, Angada B. Sachid, Ali M. Niknejad, Chenming Hu, Sagnik Dey, Samuel Martin, Xin Zhang	Flicker noise in advanced CMOS technology: Effects of halo implant.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Jesús A. del Alamo	Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre, Valeria Kilchytska, François Andrieu	Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani	DC and small-signal numerical simulation of graphene base transistor for terahertz operation.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Anh-Tuan Do, Karthik G. Jayaraman, Pushpapraj Singh, Chua Geng Li, Kiat Seng Yeo, Tony Tae-Hyoung Kim	Design and array implementation a cantilever-based non-volatile memory utilizing vibrational reset.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai	Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Giorgio Palma, Elisa Vianello, Olivier Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, Catherine Carabasse, Gabriel Molas, Barbara De Salvo	A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Tsanka Z. Todorova, Philippe Blaise, Elisa Vianello, Leonardo R. C. Fonseca	Understanding the conduction mechanism of the chalcogenide Ag2S silver-doped through ab initio simulation.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Radu A. Sporea, Abdullah S. Alshammari, Stamatis Georgakopoulos, John Underwood, Maxim Shkunov, S. Ravi P. Silva	Micron-scale inkjet-assisted digital lithography for large-area flexible electronics.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Ryosho Nakane, Yusuke Shuto, Hiroaki Sukegawa, Zhenchao Wen, Shuu'ichirou Yamamoto, Seiji Mitani, Masaaki Tanaka, Koichiro Inomata, Satoshi Sugahara	Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Sofia Johansson, Jiongjiong Mo, Erik Lind	Characterization of border traps in III-V MOSFETs using an RF transconductance method.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Áron Szabó, Mathieu Luisier	Full-band simulation of p-type ultra-scaled silicon nanowire transistors.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Moritz Hackenberg, Mathias Rommel, Maximilian Rumler, Jürgen Lorenz, Peter Pichler, Karim Huet, Razvan Negru, Giuseppe Fisicaro, Antonino La Magna, Nadjib Taleb, Maurice Quillec	Melt depth and time variations during pulsed laser thermal annealing with one and more pulses.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont	Effect of ions presence in the SiOCH inter metal dielectric structure.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Eugenio Dentoni Litta, Per-Erik Hellström, Mikael Östling	Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETs.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Andre Wachowiak, Stefan Slesazeck, Paul Jordan, Jürgen Holz, Thomas Mikolajick	New color sensor concept based on single spectral tunable photodiode.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Benoit Voisin, Benoit Roche, Eva Dupont-Ferrier, Benoit Sklénard, Manuel Cobian, Xavier Jehl, Olga Cueto, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi, Marc Sanquer	The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota	Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Ionut Radu, Gweltaz Gaudin, William van den Daele, Fabrice Letertre, Carlos Mazure, Léa Di Cioccio, Thomas Lacave, Frederic Mazen, Pascal Scheiblin, Thomas Signamarcheix, Sorin Cristoloveanu	Novel low temperature 3D wafer stacking technology for high density device integration.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Walter M. Weber, Jens Trommer, Dominik Martin, Matthias Grube, Andre Heinzig, Thomas Mikolajick	Reconfigurable nanowire electronics - Device principles and circuit prospects.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Witold P. Maszara, M.-R. Lin	FinFETs - Technology and circuit design challenges.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Mathieu Luisier, Reto Rhyner	Atomistic simulation of electron and phonon transport in nano-devices.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Wolfgang A. Vitale, Montserrat Fernandez-Bolaños, Antonios Bazigos, Catherine Dehollain, Adrian Mihai Ionescu	RF MEMS power sensors for ultra-low power wake-up circuit applications.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Negin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver	High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo	Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Alfons Dehe, Martin Wurzer, Marc Fuldner, Ulrich Krumbein	Design of a poly silicon MEMS microphone for high signal-to-noise ratio.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang	A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Georg S. Duesberg, Hye-Young Kim, Kangho Lee, Niall McEvoy, Sinead Winters, Chanyoung Yim	Investigation of carbon-silicon schottky diodes and their use as chemical sensors.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Doyoung Jang, Marie Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, An De Keersgieter, Thomas Chiarella, Romain Ritzenthaler, Morin Dehan, Abdelkarim Mercha	STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Giulia Piccolo, Amir Sammak, Raymond J. E. Hueting, Jurriaan Schmitz, Lis K. Nanver	Role of junction depth in light emission from silicon p-i-n leds.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Stefan Finkbeiner	MEMS for automotive and consumer electronics.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Carlos Navarro, Maryline Bawedin, François Andrieu, Bruno Sagnes, Sorin Cristoloveanu	Why are SCE overestimated in FD-SOI MOSFETs?	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Graciele Batistell, Johannes Sturm	Filter-less color sensor in standard CMOS technology.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota	Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Giuliano Marcolini, Fabio Giovanardi, Massimo Rudan, Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti, Andrea Cappelli	Modeling the dynamic self-heating of PCM.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Tony Schenk, Stefan Mueller, Uwe Schroeder, Robin Materlik, Alfred Kersch, Mihaela Popovici, Christoph Adelmann, Sven Van Elshocht, Thomas Mikolajick	Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories.	ESSDERC	2013	DBLP DOI BibTeX RDF
1	Timothy J. Blanche, Joshua Paul van Kleef, Peter Ledochowitsch, Travis L. Massey, Rikky Muller, Dongjin Seo, Michel M. Maharbiz	Cyborg insects, neural dust and other things: Building interfaces between the synthetic and the multicellular.	ESSDERC	2013	DBLP DOI BibTeX RDF

Publications at "ESSDERC"( http://dblp.L3S.de/Venues/ESSDERC )