Search results for "IRPS"

Hits ?▲	Authors	Title	Venue	Year	Link
1	Chris Kendrick, Michael Cook 0004, Jeff P. Gambino, T. Myers, J. Slezak, T. Hirano, T. Sano, Y. Watanabe, K. Ozeki	Polysilicon resistor stability under voltage stress for safe-operating area characterization.	IRPS	2018	DBLP DOI BibTeX RDF
1	Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang	New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology.	IRPS	2018	DBLP DOI BibTeX RDF
1	Sol-Kyu Lee, Kyung-Tae Jang, Seol-Min Yi, Young-Chang Joo	Successive breakdown mode of time-dependent dielectric breakdown for Cu interconnects and lifetime enhancement under dynamic bias stress.	IRPS	2018	DBLP DOI BibTeX RDF
1	Lucile Arnaud, Stéphane Moreau, Amadine Jouve, Imed Jani, Didier Lattard, F. Fournel, C. Euvrard, Y. Exbrayat, Viorel Balan, Nicolas Bresson, S. Lhostis, J. Jourdon, E. Deloffre, S. Guillaumet, Alexis Farcy, Simon Gousseau, M. Arnoux	Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kirby K. H. Smithe, Zhongwei Zhu, Connor S. Bailey, Eric Pop, Alex Yoon	Investigation of monolayer MX2 as sub-nanometer copper diffusion barriers.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede	A multi-bit/cell PUF using analog breakdown positions in CMOS.	IRPS	2018	DBLP DOI BibTeX RDF
1	Younggeun Ji, Jeonghoon Kim, Jungin Kim, Miji Lee, Jaeheon Noh, Taeyoung Jeong, Juhyeon Shin, Junho Kim, Young Heo, Ung Cho, Hyun-Chul Sagong, Junekyun Park, Yeonsik Choo, Gilhwan Do, Hoyoung Kang, Eunkyeong Choi, Dongyoon Sun, Changki Kang, Sangchul Shin, Sangwoo Pae	Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI.	IRPS	2018	DBLP DOI BibTeX RDF
1	P. C. Su, C. M. Jiang, C. W. Wang, Tahui Wang	Correlation between SET-state current level and read-disturb failure time in a resistive switching memory.	IRPS	2018	DBLP DOI BibTeX RDF
1	Amit A. Kale, Amit Marathe, Ajay Kamath	Machine learning based dynamic cause maps for condition monitoring and life estimation.	IRPS	2018	DBLP DOI BibTeX RDF
1	Tian Shen, Kong Boon Yeap, Sean P. Ogden, Cathryn Christiansen, Patrick Justison	New insight on TDDB area scaling methodology of non-Poisson systems.	IRPS	2018	DBLP DOI BibTeX RDF
1	Pai-Yu Chen, Shimeng Yu	Reliability perspective of resistive synaptic devices on the neuromorphic system performance.	IRPS	2018	DBLP DOI BibTeX RDF
1	David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher	Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films.	IRPS	2018	DBLP DOI BibTeX RDF
1	Chia-Chi Fan, Chun-Yuan Tu, Ming-Huei Lin, Chun-Yen Chang, Chun-Hu Cheng, Yen-Liang Chen, Guan-Lin Liou, Chien Liu, Wu-Ching Chou, Hsiao-Hsuan Hsu	Interface engineering of ferroelectric negative capacitance FET for hysteresis-free switch and reliability improvement.	IRPS	2018	DBLP DOI BibTeX RDF
1	Omar Chihani, Loic Théolier, Jean-Yves Delétage, Eric Woirgard, Alain Bensoussan 0002, André Durier	Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Ayanori Ikoshi, Masahiro Toki, Hiroto Yamagiwa, Daijiro Arisawa, Masahiro Hikita, Kazuki Suzuki, Manabu Yanagihara, Yasuhiro Uemoto, Kenichiro Tanaka, Tetsuzo Ueda	Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations.	IRPS	2018	DBLP DOI BibTeX RDF
1	Balaji Narasimham, Saket Gupta, Daniel S. Reed, J. K. Wang, Nick Hendrickson, Hasan Taufique	Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs.	IRPS	2018	DBLP DOI BibTeX RDF
1	R. E. Stahbush, Nadeemullah A. Mahadik	Defects affecting SiC power device reliability.	IRPS	2018	DBLP DOI BibTeX RDF
1	Ferdinando Iucolano, Antonino Maurizio Parisi, Santo Reina, Alessandro Chini	A novel GaN HEMT degradation mechanism observed during HTST test.	IRPS	2018	DBLP DOI BibTeX RDF
1	Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang, Yangyuan Wang, Ru Huang	Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Baozhen Li, Andrew Kim, Paul McLaughlin, Barry P. Linder, Cathryn Christiansen	Electromigration characteristics of power grid like structures.	IRPS	2018	DBLP DOI BibTeX RDF
1	C. Zhou, Keith A. Jenkins, P. I. Chuang, Christos Vezyrtzis	Effect of HCI degradation on the variability of MOSFETS.	IRPS	2018	DBLP DOI BibTeX RDF
1	Mariappan Murugesan, Takafumi Fukushima, Ji Chel Bea, Hiroyuki Hashimoto, Mitsu Koyanagi	Intra- and inter-chip electrical interconnection formed by directed self assembly of nanocomposite containing diblock copolymer and nanometal.	IRPS	2018	DBLP DOI BibTeX RDF
1	Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy 0001, E. Vincent, Gérard Ghibaudo	Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).	IRPS	2018	DBLP DOI BibTeX RDF
1	Roberta Bottini, Andrea Ghetti, Sara Vigano, Maria Grazia Valentini, Pratap Murali, Chandra Mouli	Non-poissonian behavior of hot carrier degradation induced variability in MOSFETs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Andy Fenner, Mark Porter, Randy Crutchfield	Making the connection between physics of failure and system-level reliability for medical devices.	IRPS	2018	DBLP DOI BibTeX RDF
1	Miky Lee, K. Kim, D. Lim, D. Cho, Ck. Han	Weibull cumulative distribution function (CDF) analysis with life expectancy endurance test result of power window switch.	IRPS	2018	DBLP DOI BibTeX RDF
1	Deniz Kocaay, Philippe Roussel, Kristof Croes, Ivan Ciofi, Alicja Lesniewska, Ingrid De Wolf	Method to assess the impact of LER and spacing variation on BEOL dielectric reliability using 2D-field simulations for <20nm spacing.	IRPS	2018	DBLP DOI BibTeX RDF
1	Yuichiro Mitani, Yusuke Higashi, Yasushi Nakasaki	Study on mechanism of thermal curing in ultra-thin gate dielectrics.	IRPS	2018	DBLP DOI BibTeX RDF
1	Miaomiao Wang 0006, Richard G. Southwick, Kangguo Cheng, James H. Stathis	Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics.	IRPS	2018	DBLP DOI BibTeX RDF
1	Ernest Y. Wu, Andrew Kim, Baozhen Li, James H. Stathis	Elapsed-time statistics of successive breakdown in the presence of variability for dielectric breakdown in BEOL/MOL/FEOL applications.	IRPS	2018	DBLP DOI BibTeX RDF
1	Rania Lajmi, Florian Cacho, O. David, Jean-Pierre Blanc, Emmanuel Rouat, Sébastien Haendler, Ph. Benech, Estelle Lauga-Larroze, Sylvain Bourdel	Reliability assessment of 4GSP/s interleaved SAR ADC.	IRPS	2018	DBLP DOI BibTeX RDF
1	Guido Quax, Theo Smedes	An integral injector-victim current transfer model for latchup design rule optimization.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kristof Croes, Vladimir Cherman, Melina Lofrano, Houman Zahedmanesh, Luka Kljucar, Mario Gonzalez, Ingrid De Wolf, Zsolt Tökei, Eric Beyne	Stress mitigation of 3D-stacking/packaging induced stresses.	IRPS	2018	DBLP DOI BibTeX RDF
1	Jifa Hao, Amartya Ghosh, Mark Rinehimer, Joe Yedinak, Muhammad Ashraful Alam	BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Chih-Yi Yang, Tian-Li Wu, Tin-En Hsieh, Edward Yi Chang	Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kaustubh Joshi, Shu-Wen Chang, D. S. Huang, P. J. Liao, Yung-Huei Lee	Study of dynamic TDDB in scaled FinFET technologies.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kin P. Cheung	SiC power MOSFET gate oxide breakdown reliability - Current status.	IRPS	2018	DBLP DOI BibTeX RDF
1	Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye	Low frequency noise in MOS2 negative capacitance field-effect transistor.	IRPS	2018	DBLP DOI BibTeX RDF
1	Guido T. Sasse	Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to use conditions.	IRPS	2018	DBLP DOI BibTeX RDF
1	Y. H. Liu, H. Y. Lin, C. M. Jiang, Tahui Wang, W. J. Tsai, T. C. Lu, K. C. Chen, Chih-Yuan Lu	Investigation of data pattern effects on nitride charge lateral migration in a charge trap flash memory by using a random telegraph signal method.	IRPS	2018	DBLP DOI BibTeX RDF
1	H. Jiang, H. Zhang, Balaji Narasimham, Lloyd W. Massengill, Bharat L. Bhuva	Designing soft-error-aware circuits with power and speed optimization.	IRPS	2018	DBLP DOI BibTeX RDF
1	Srikanth Jagannathan, Kumar Abhishek, Nihaar N. Mahatme, Ender Yilmaz	Design of aging aware 5 Gbps LVDS transmitter for automotive applications.	IRPS	2018	DBLP DOI BibTeX RDF
1	Andrea Padovani, Luca Larcher	Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach.	IRPS	2018	DBLP DOI BibTeX RDF
1	Giovanni Landi, Carlo Barone, C. Mauro, S. Pagano, Heinz-Christoph Neitzert	Evaluation of silicon, organic, and perovskite solar cell reliability with low-frequency noise spectroscopy.	IRPS	2018	DBLP DOI BibTeX RDF
1	Pradeep Lall, Hao Zhang, Rahul Lall	PHM of state-of-charge for flexible power sources in wearable electronics with EKF.	IRPS	2018	DBLP DOI BibTeX RDF
1	Heejin Kim, Hayeon Shin, Jiyoung Park, Youngtae Choi, Jongwoo Park 0001	Statistical modeling and reliability prediction for transient luminance degradation of flexible OLEDs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Christine S. Hau-Riege, Huilin Xu, You-Wen Yau, Manasi S. Kakade, Jianfeng Li, Xiaonan Zhang, Hosain Farr	Electromigration of multi-solder ball test structures.	IRPS	2018	DBLP DOI BibTeX RDF
1	Lesly Endrinal, Rakesh Kinger, Lavakumar Ranganathan, Amit Sheth 0001	Solving critical issues in 10nm technology using innovative laser-based fault isolation and DFT diagnosis techniques.	IRPS	2018	DBLP DOI BibTeX RDF
1	Pin-Shiang Chen, Shou-Chung Lee, A. S. Oates, Chee Wee Liu	BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown.	IRPS	2018	DBLP DOI BibTeX RDF
1	Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae	Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.	IRPS	2018	DBLP DOI BibTeX RDF
1	Riddhi Jitendrakumar Shah, Florian Cacho, Vincent Huard, Souhir Mhira, D. Arora, Pankaj Agarwal, Shubham Kumar, S. Balaraman, Bijoy Kumar Singh, Lorena Anghel	Investigation of speed sensors accuracy for process and aging compensation.	IRPS	2018	DBLP DOI BibTeX RDF
1	Fernando L. Aguirre, Sebastián Matías Pazos, Felix Palumbo, Sivan Fadida, Roy Winter, Moshe Eizenberg	Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks.	IRPS	2018	DBLP DOI BibTeX RDF
1	Wen Liu, Andreas Kerber, Fernando Guarin, Claude Ortolland	Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices.	IRPS	2018	DBLP DOI BibTeX RDF
1		IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018	IRPS	2018	DBLP BibTeX RDF
1	M. Kraatz, Christoph Sander, André Clausner, M. Hauschildt, Yvonne Standke, Martin Gall, Ehrenfried Zschech	Analysis of electromigration-induced backflow stresses in Cu(Mn) interconnects using high statistical sampling.	IRPS	2018	DBLP DOI BibTeX RDF
1	D. Singh, Oscar D. Restrepo, P. P. Manik, N. Rao Mavilla, H. Zhang, Peter C. Paliwoda, S. Pinkett, Y. Deng, Eduardo Cruz Silva, J. B. Johnson, M. Bajaj, S. Furkay, Z. Chbili, A. Kerber, C. Christiansen, S. Narasimha, E. Maciejewski, S. Samavedam, C.-H. Lin	Bottom-up methodology for predictive simulations of self-heating in aggressively scaled process technologies.	IRPS	2018	DBLP DOI BibTeX RDF
1	Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger	Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.	IRPS	2018	DBLP DOI BibTeX RDF
1	T. W. Lin, S. H. Ku, C. H. Cheng, C. W. Lee, Ijen Huang, Wen-Jer Tsai, T. C. Lu, W. P. Lu, K. C. Chen, Tahui Wang, Chih-Yuan Lu	Chip-level characterization and RTN-induced error mitigation beyond 20nm floating gate flash memory.	IRPS	2018	DBLP DOI BibTeX RDF
1	Yi-Pin Fang, Anthony S. Oates	Soft errors in 7nm FinFET SRAMs with integrated fan-out packaging.	IRPS	2018	DBLP DOI BibTeX RDF
1	Mitsuhiko Igarashi, Yuuki Uchida, Yoshio Takazawa, Yasumasa Tsukamoto, Koji Shibutani, Koji Nii	Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET.	IRPS	2018	DBLP DOI BibTeX RDF
1	Thibault Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, Francesco La Rosa, Stephan Niel, Arnaud Régnier, Jean-Michel Portal, Pascal Masson	Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip.	IRPS	2018	DBLP DOI BibTeX RDF
1	F. Griggio, James Palmer, F. Pan, N. Toledo, Anthony Schmitz, Ilan Tsameret, R. Kasim, Gerald S. Leatherman, Jeffery Hicks, A. Madhavan, J. Shin, J. Steigerwald, A. Yeoh, C. Auth	Reliability of dual-damascene local interconnects featuring cobalt on 10 nm logic technology.	IRPS	2018	DBLP DOI BibTeX RDF
1	Brian Kosinski, Ken Dodson	Key attributes to achieving > 99.99 satellite availability.	IRPS	2018	DBLP DOI BibTeX RDF
1	Anthonin Verdy, Gabriele Navarro, Mathieu Bernard, Sophie Chevalliez, Niccolo Castellani, Emmanuel Nolot, Julien Garrione, Pierre Noe, Guillaume Bourgeois, Veronique Sousa, Marie Claire Cyrille, Etienne Nowak	Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance.	IRPS	2018	DBLP DOI BibTeX RDF
1	Devyani Patra, Ahmed Kamal Reza, Mehdi Katoozi, Ethan H. Cannon, Kaushik Roy 0001, Yu Cao 0001	Accelerated BTI degradation under stochastic TDDB effect.	IRPS	2018	DBLP DOI BibTeX RDF
1	Nagothu Karmel Kranthi, Abhishek Mishra, Adil Meersha, Harsha B. Variar, Mayank Shrivastava	Defect-Assisted Safe Operating Area Limits and High Current Failure in Graphene FETs.	IRPS	2018	DBLP DOI BibTeX RDF
1	C. Monachon, Marcin Stefan Zielinski, J. Berney, D. Poppitz, Andreas Graff, Steffen Breuer, Lutz Kirste	Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices.	IRPS	2018	DBLP DOI BibTeX RDF
1	Souhir Mhira, Vincent Huard, D. Arora, Philippe Flatresse, Alain Bravaix	Resilient automotive products through process, temperature and aging compensation schemes.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kangwook Lee 0005	High-density fan-out technology for advanced SiP and 3D heterogeneous integration.	IRPS	2018	DBLP DOI BibTeX RDF
1	Sofie Beyne, Shibesh Dutta, Olalla Varela Pedreira, Niels Bosman, Christoph Adelmann, Ingrid De Wolf, Zsolt Tökei, Kristof Croes	The first observation of p-type electromigration failure in full ruthenium interconnects.	IRPS	2018	DBLP DOI BibTeX RDF
1	C. Chung, D. Kobayashi, K. Hirose	Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation.	IRPS	2018	DBLP DOI BibTeX RDF
1	Mingoo Seok, Peter R. Kinget, Teng Yang, Jiangyi Li, Doyun Kim	Recent advances in in-situ and in-field aging monitoring and compensation for integrated circuits: Invited paper.	IRPS	2018	DBLP DOI BibTeX RDF
1	Subramanian S. Iyer, Adeel Ahmad Bajwa	Reliability challenges in advance packaging.	IRPS	2018	DBLP DOI BibTeX RDF
1	P. Srinivasan, Rakesh Ranjan, S. Cimino, A. Zainuddin, B. Kannan, L. Pantisano, I. Mahmud, G. Dilliway, Tanya Nigam	Understanding gate metal work function (mWF) impact on device reliability - A holistic approach.	IRPS	2018	DBLP DOI BibTeX RDF
1	Yiming Qu, Ran Cheng, Wei Liu, Junkang Li, Bich-Yen Nguyen, Olivier Faynot, Nuo Xu, Bing Chen, Yi Zhao	Effect of measurement speed (μs-800 ps) on the characterization of reliability behaviors for FDSOI nMOSFETs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Peter C. Paliwoda, Zakariae Chbili, A. Kerber, D. Singh, Durga Misra	Ambient temperature and layout impact on self-heating characterization in FinFET devices.	IRPS	2018	DBLP DOI BibTeX RDF
1	Eduard Cartier, Martin M. Frank, Takashi Ando, John Rozen, Vijay Narayanan	PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation.	IRPS	2018	DBLP DOI BibTeX RDF
1	Marta Pedro, Javier Martín-Martínez, E. Miranda, Rosana Rodríguez, Montserrat Nafría, M. B. González, Francesca Campabadal	Device variability tolerance of a RRAM-based self-organizing neuromorphic system.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kurt J. Lezon, Shi-Jie Wen, Y.-F. Dan, Richard Wong, Bharat L. Bhuva	Single-event effects on optical transceiver.	IRPS	2018	DBLP DOI BibTeX RDF
1	Timothy J. Silverman, Steve Johnston	Permanent shunts from passing shadows: Reverse-bias damage in thin-film photovoltaic modules.	IRPS	2018	DBLP DOI BibTeX RDF
1	Nirmal R. Saxena, Sanu Mathew, Krishna Saraswat	Keynote 1: The road to resilient computing in autonomous driving is paved with redundancy.	IRPS	2018	DBLP DOI BibTeX RDF
1	Jay Sarkar, Cory Peterson, Amir Sanayei	Machine-learned assessment and prediction of robust solid state storage system reliability physics.	IRPS	2018	DBLP DOI BibTeX RDF
1	M. Rafik, A. P. Nguyen, Xavier Garros, M. Arabi, X. Federspiel, Cheikh Diouf	AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment.	IRPS	2018	DBLP DOI BibTeX RDF
1	Philippe J. Roussel, Adrian Vaisman Chasin, Steven Demuynck, Naoto Horiguchi, Dimitri Linten, Anda Mocuta	New methodology for modelling MOL TDDB coping with variability.	IRPS	2018	DBLP DOI BibTeX RDF
1	Toru Sugiyama, Kohei Oasa, Yasunobu Saito, Akira Yoshioka, Takuo Kikuchi, Aya Shindome, Tatsuya Ohguro, Takeshi Hamamoto	Evaluation methodology for current collapse phenomenon of GaN HEMTs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot	On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.	IRPS	2018	DBLP DOI BibTeX RDF
1	Shouhei Fukuyama, Kazuki Maeda, Shinpei Matsuda, Ken Takeuchi, Ryutaro Yasuhara	Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM.	IRPS	2018	DBLP DOI BibTeX RDF
1	Jia Hao Lim, Nagarajan Raghavan, Sen Mei, Vinayak Bharat Naik, Jae Hyun Kwon, S. M. Noh, B. Liu, E. H. Toh, Nyuk Leong Chung, Robin Chao, K. H. Lee, Kin Leong Pey	Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction.	IRPS	2018	DBLP DOI BibTeX RDF
1	Pradeep Lall, Kazi Mirza, David Locker	Prognostics health management of electronic systems - A reliability physics approach.	IRPS	2018	DBLP DOI BibTeX RDF
1	SangHoon Shin, Yen-Pu Chen, Woojin Ahn, Honglin Guo, Byron Williams, Jeff West, Tom Bonifield, Dhanoop Varghese, Srikanth Krishnan, Muhammad Ashraful Alam	High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.	IRPS	2018	DBLP DOI BibTeX RDF
1	Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer	Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.	IRPS	2018	DBLP DOI BibTeX RDF
1	Yasunori Tateno, Yasuyo Kurachi, Hiroshi Yamamoto, Takashi Nakabayashi	Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests.	IRPS	2018	DBLP DOI BibTeX RDF
1	Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken	Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kuo-Hsuan Meng, Mohamed Moosa, Cynthia A. Torres, James W. Miller	A case study of ESD trigger circuit: Time-out and stability.	IRPS	2018	DBLP DOI BibTeX RDF
1	Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat	Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors.	IRPS	2018	DBLP DOI BibTeX RDF
1	Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, Jinju Kim, Ukjin Jung, Minhyuck Choi, Junekyun Park, Sangchul Shin, Sangwoo Pae	A systematic study of gate dielectric TDDB in FinFET technology.	IRPS	2018	DBLP DOI BibTeX RDF
1	Krzysztof Domanski	Latch-up in FinFET technologies.	IRPS	2018	DBLP DOI BibTeX RDF
1	Cameron McNairy	Exascale fault tolerance challenge and approaches.	IRPS	2018	DBLP DOI BibTeX RDF
1	Alok Ranjan 0001, Nagarajan Raghavan, Sean J. O'Shea, Sen Mei, Michel Bosman, Kalya Shubhakar, Kin Leong Pey	Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics.	IRPS	2018	DBLP DOI BibTeX RDF
1	Yun Li, K. L. Wang, Shaoyan Di, Peng Huang 0004, Gang Du, Xiao-Yan Liu	PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics.	IRPS	2018	DBLP DOI BibTeX RDF

Publications at "IRPS"( http://dblp.L3S.de/Venues/IRPS )