Search results for "PBTI"

Hits ?▲	Authors	Title	Venue	Year	Link	Author keywords
117	Zhenyu Qi, Jiajing Wang, Adam C. Cabe, Stuart N. Wooters, Travis N. Blalock, Benton H. Calhoun, Mircea R. Stan	SRAM-based NBTI/PBTI sensor system design.	DAC	2010	DBLP DOI BibTeX RDF	PBTI, sensor system design, sensor, redundancy, process variation, aging, yield, SRAM, NBTI
81	Anuj Pushkarna, Hamid Mahmoodi	Reliability analysis of power gated SRAM under combined effects of NBTI and PBTI in nano-scale CMOS.	ACM Great Lakes Symposium on VLSI	2010	DBLP DOI BibTeX RDF	reliability, aging, SRAM, power gating
51	Gyusung Park, Hanzhao Yu, Minsu Kim, Chris H. Kim	An All BTI (N-PBTI, N-NBTI, P-PBTI, P-NBTI) Odometer based on a Dual Power Rail Ring Oscillator Array.	IRPS	2021	DBLP DOI BibTeX RDF
28	Sanjay V. Kumar, Chris H. Kim, Sachin S. Sapatnekar	Adaptive techniques for overcoming performance degradation due to aging in digital circuits.	ASP-DAC	2009	DBLP DOI BibTeX RDF
26	Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini	High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps.	IRPS	2023	DBLP DOI BibTeX RDF
26	Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo	Impact of Gate Offset on PBTI of p-GaN Gate HEMTs.	IRPS	2022	DBLP DOI BibTeX RDF
26	Nirmaan Shanker, Li-Chen Wang, Suraj S. Cheema, Wenshen Li, Nilotpal Choudhury, Chenming Hu, Souvik Mahapatra, Sayeef S. Salahuddin	On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO2-ZrO2 Superlattice Gate Stack on Lg=90 nm nFETs.	VLSI Technology and Circuits	2022	DBLP DOI BibTeX RDF
26	Lulu Chou, Xiao Yu, Huan Liu, Yan Liu, Genquan Han, Yue Hao	Systematic Study on Positive Bias Temperature Instability(PBTI) of ZrO2-based Ge nMOSFETs with Interlayer Passivations.	ICICDT	2022	DBLP DOI BibTeX RDF
26	Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin 0006, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo	Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT.	IRPS	2021	DBLP DOI BibTeX RDF
26	Dimple Kochar, Tarun Samadder, Subhadeep Mukhopadhyay 0003, Souvik Mahapatra	Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI.	IRPS	2021	DBLP DOI BibTeX RDF
26	Ang Li, Yi Shen, Ziqian Li, Yuhao Zhu 0004, Huiqing Wen, Wen Liu 0010	Stability Analysis of Monolithic GaN MIS-HEMT Comparator with Device PBTI and Circuit Stress Tests.	ASICON	2021	DBLP DOI BibTeX RDF
26	Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang 0006, Tianchun Ye 0001	Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks.	Sci. China Inf. Sci.	2020	DBLP DOI BibTeX RDF
26	Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, A. Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso	Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.	IRPS	2019	DBLP DOI BibTeX RDF
26	Xianqiang Liu, Xiaodi Xu, Chenjie Gu, Renyuan Gu, Weiwei Wang, Wenjun Liu, Tianli Duan	Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device.	Microelectron. Reliab.	2018	DBLP DOI BibTeX RDF
26	William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, A. Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard	A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT.	IRPS	2018	DBLP DOI BibTeX RDF
26	Eduard Cartier, Martin M. Frank, Takashi Ando, John Rozen, Vijay Narayanan	PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation.	IRPS	2018	DBLP DOI BibTeX RDF
26	Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer	Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.	IRPS	2018	DBLP DOI BibTeX RDF
26	Yun Li, K. L. Wang, Shaoyan Di, Peng Huang 0004, Gang Du, Xiao-Yan Liu	PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics.	IRPS	2018	DBLP DOI BibTeX RDF
26	Maryam Karimi, Nezam Rohbani, Seyed Ghassem Miremadi	A Low Area Overhead NBTI/PBTI Sensor for SRAM Memories.	IEEE Trans. Very Large Scale Integr. Syst.	2017	DBLP DOI BibTeX RDF
26	Usman Khalid, Antonio Mastrandrea, Mauro Olivieri	Effect of NBTI/PBTI Aging and Process Variations on Write Failures in MOSFET and FinFET Flip-Flops.	CoRR	2017	DBLP BibTeX RDF
26	Koyo Suzuki, Katsuyoshi Miura, Koji Nakamae	NBTI/PBTI tolerant arbiter PUF circuits.	IOLTS	2017	DBLP DOI BibTeX RDF
26	Mitsuhiko Igarashi, Yoshio Takazawa, Yasumasa Tsukamoto, Kan Takeuchi, Koji Shibutani	NBTI/PBTI separated BTI monitor with 4.2x sensitivity by standard cell based unbalanced ring oscillator.	A-SSCC	2017	DBLP DOI BibTeX RDF
26	Wei-Ting Kary Chien, Atman Yong Zhao, Yueqin Zhu, Yongliang Song	Early detection and prediction of HKMG SRAM HTOL performance by WLR PBTI tests.	Microelectron. Reliab.	2016	DBLP DOI BibTeX RDF
26	Andres F. Gomez, Víctor H. Champac	Critical path selection under NBTI/PBTI aging for adaptive frequency tuning.	EWDTS	2016	DBLP DOI BibTeX RDF
26	Maoxiang Yi, Yingxian Gan, Zhengfeng Huang, Huaguo Liang	Co-mitigating circuit PBTI and HCI aging considering NMOS transistor stacking effect.	ISIC	2016	DBLP DOI BibTeX RDF
26	Tony Tae-Hyoung Kim, Pong-Fei Lu, Keith A. Jenkins, Chris H. Kim	A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology.	IEEE Trans. Very Large Scale Integr. Syst.	2015	DBLP DOI BibTeX RDF
26	Usman Khalid, Antonio Mastrandrea, Mauro Olivieri	Effect of NBTI/PBTI aging and process variations on write failures in MOSFET and FinFET flip-flops.	Microelectron. Reliab.	2015	DBLP DOI BibTeX RDF
26	Alex Guo, Jesús A. del Alamo	Positive-bias temperature instability (PBTI) of GaN MOSFETs.	IRPS	2015	DBLP DOI BibTeX RDF
26	Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier	Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters.	IRPS	2015	DBLP DOI BibTeX RDF
26	Xiaoyu Tang, J. Lu, Rui Zhang 0024, Yi Zhao, Wangran Wu, Chang Liu, Yi Shi, Ziqian Huang, Yuechan Kong	PBTI and HCI degradations of ultrathin body InGaAs-On-Insulator nMOSFETs fabricated by wafer bonding.	IRPS	2015	DBLP DOI BibTeX RDF
26	Vita Pi-Ho Hu, Ming-Long Fan, Pin Su, Ching-Te Chuang	Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells.	ISCAS	2015	DBLP DOI BibTeX RDF
26	Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara	PBTI for N-type tunnel FinFETs.	ICICDT	2015	DBLP DOI BibTeX RDF
26	Jin Hyung Choi, Jin-Woo Han, Chong-Gun Yu, Jong Tae Park 0003	Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs.	Microelectron. Reliab.	2014	DBLP DOI BibTeX RDF
26	Dimitris P. Ioannou	HKMG CMOS technology qualification: The PBTI reliability challenge.	Microelectron. Reliab.	2014	DBLP DOI BibTeX RDF
26	Xiaofei Wang, Weichao Xu, Chris H. Kim	SRAM read performance degradation under asymmetric NBTI and PBTI stress: Characterization vehicle and statistical aging data.	CICC	2014	DBLP DOI BibTeX RDF
26	Keith A. Jenkins, Pong-Fei Lu	On-chip circuit to monitor long-term NBTI and PBTI degradation.	Microelectron. Reliab.	2013	DBLP DOI BibTeX RDF
26	Zhao Chuan Lee, Kam Chew Leong, Zhi-Hui Kong, Tony Tae-Hyoung Kim	NBTI/PBTI-Aware WWL Voltage Control for Half-Selected Cell Stability Improvement.	IEEE Trans. Circuits Syst. II Express Briefs	2013	DBLP DOI BibTeX RDF
26	Yen-Han Lee, Ing-Chao Lin, Sheng-Wei Wang	Impacts of NBTI and PBTI effects on ternary CAM.	ISQED	2013	DBLP DOI BibTeX RDF
26	Saman Kiamehr, Farshad Firouzi, Mehdi Baradaran Tahoori	Aging-aware timing analysis considering combined effects of NBTI and PBTI.	ISQED	2013	DBLP DOI BibTeX RDF
26	Nivard Aymerich, Shrikanth Ganapathy, Antonio Rubio 0001, Ramon Canal, Antonio González 0001	Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells.	Integr.	2012	DBLP DOI BibTeX RDF
26	Muhammad Faiz Bukhori, Noor Ain Kamsani, Asen Asenov, Nazrul Anuar Nayan	Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models.	Microelectron. J.	2012	DBLP DOI BibTeX RDF
26	Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser	New insights on the PBTI phenomena in SiON pMOSFETs.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
26	Masaoud Houshmand Kaffashian, Reza Lotfi, Khalil Mafinezhad, Hamid Mahmoodi	Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS.	Microelectron. Reliab.	2012	DBLP DOI BibTeX RDF
26	Hossein Karimiyan Alidash, Andrea Calimera, Alberto Macii, Enrico Macii, Massimo Poncino	On-Chip NBTI and PBTI Tracking through an All-Digital Aging Monitor Architecture.	PATMOS	2012	DBLP DOI BibTeX RDF
26	Tony T. Kim, Pong-Fei Lu, Chris H. Kim	Design of ring oscillator structures for measuring isolated NBTI and PBTI.	ISCAS	2012	DBLP DOI BibTeX RDF
26	Zhao Chuan Lee, Kim Ming Ho, Zhi-Hui Kong, Tony T. Kim	NBTI/PBTI-aware wordline voltage control with no boosted supply for stability improvement of half-selected SRAM cells.	ISOCC	2012	DBLP DOI BibTeX RDF
26	Ming-Chien Tsai, Yi-Wei Lin, Hao-I Yang, Ming-Hsien Tu, Wei-Chiang Shih, Nan-Chun Lien, Kuen-Di Lee, Shyh-Jye Jou, Ching-Te Chuang, Wei Hwang	Embedded SRAM ring oscillator for in-situ measurement of NBTI and PBTI degradation in CMOS 6T SRAM array.	VLSI-DAT	2012	DBLP DOI BibTeX RDF
26	Hao-I Yang, Wei Hwang, Ching-Te Chuang	Impacts of NBTI/PBTI and Contact Resistance on Power-Gated SRAM With High-kappa Metal-Gate Devices.	IEEE Trans. Very Large Scale Integr. Syst.	2011	DBLP DOI BibTeX RDF
26	Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel	Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.	Microelectron. Reliab.	2011	DBLP DOI BibTeX RDF
26	Seung Min Lee, Dong Hun Lee, Jae Ki Lee, Jong Tae Park 0003	Concurrent PBTI and hot carrier degradation in n-channel MuGFETs.	Microelectron. Reliab.	2011	DBLP DOI BibTeX RDF
26	Hao-I Yang, Shyh-Chyi Yang, Wei Hwang, Ching-Te Chuang	Impacts of NBTI/PBTI on Timing Control Circuits and Degradation Tolerant Design in Nanoscale CMOS SRAM.	IEEE Trans. Circuits Syst. I Regul. Pap.	2011	DBLP DOI BibTeX RDF
26	Asen Asenov, Andrew R. Brown, Binjie Cheng	Statistical aspects of NBTI/PBTI and impact on SRAM yield.	DATE	2011	DBLP DOI BibTeX RDF
26	Saman Kiamehr, Abdulazim Amouri, Mehdi Baradaran Tahoori	Investigation of NBTI and PBTI induced aging in different LUT implementations.	FPT	2011	DBLP DOI BibTeX RDF
26	Nivard Aymerich, Shrikanth Ganapathy, Antonio Rubio 0001, Ramon Canal, Antonio González 0001	Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells.	ACM Great Lakes Symposium on VLSI	2011	DBLP DOI BibTeX RDF
26	Tony Tae-Hyoung Kim, Zhi-Hui Kong	Impacts of NBTI/PBTI on SRAM VMIN and design techniques for SRAM VMIN improvement.	ISOCC	2011	DBLP DOI BibTeX RDF
26	Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang	Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability.	Microelectron. Reliab.	2009	DBLP DOI BibTeX RDF
26	Hao-I Yang, Ching-Te Chuang, Wei Hwang	Impacts of NBTI and PBTI on Power-gated SRAM with High-k Metal-gate Devices.	ISCAS	2009	DBLP DOI BibTeX RDF
26	Gilles Reimbold, Jérôme Mitard, Xavier Garros, Charles Leroux, Gérard Ghibaudo, François Martin	Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks.	Microelectron. Reliab.	2007	DBLP DOI BibTeX RDF